Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide

被引：8

作者：

Kim, Hyun-Seop ^{[1
]}

Eom, Su-Keun ^{[2
]}

Seo, Kwang-Seok ^{[2
]}

Kim, Hyungtak ^{[1
]}

Cha, Ho-Young ^{[1
]}

机构：

[1] Hongik Univ, Sch Elect & Elect Engn, 94 Wausan Ro, Seoul 04066, South Korea

[2] Seoul Natl Univ, Dept Elect & Comp Engn, 1 Gwanak Ro, Seoul 08826, South Korea

来源：

VACUUM | 2018年 / 155卷

基金：

新加坡国家研究基金会;

关键词：

AlGaN/GaN MOS-HFETs; PECVD; SiO2; TDDB; Flat-band voltage; Charge density; Reliability; MIS-HEMTS; RELIABILITY; LEAKAGE; CHARGE;

D O I：

10.1016/j.vacuum.2018.06.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports the first-time evaluation of the time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with plasma enhanced chemical vapor deposition (PECVD) SiO2 gate oxide. The interface fixed charge density and oxide bulk charge density extracted from the flat-band voltage characteristics were 2.7 x 10(11) +/- 6.54 x 10(10) cm(-2) and -9.71 x 10(17) +/- 5.18 x 10(16) cm(-3), respectively. The time dependent dielectric breakdown (TDDB) characteristics exhibited longer lifetime estimation as the SiO2 thickness increased. The excellent reliability of the PECVD SiO2 film was validated for use as the gate oxide of recessed AlGaN/GaN MOS-HFET.

引用

页码：428 / 433

页数：6

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