Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs

被引:21
作者
Chen, CY [1 ]
Fu, SI
Cheng, SY
Chang, CY
Tsai, CH
Yen, CH
Tsai, SF
Liu, RC
Liu, WC
机构
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan
[3] Chung Shan Inst Sci & Technol, Taoyuan, Taiwan
关键词
current gain; offset voltage; sulfur treatment; temperature-dependent characteristics;
D O I
10.1109/TED.2004.839121
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The temperature-dependent dc characteristics of InGaP-GaAs heterojunction bipolar transistors with and without sulfur treatment are systematically studied and demonstrated. Due to the use of sulfur passivation, the series resistance of base-emitter junction of studied device can be effectively reduced. In addition, the device with sulfur treatment can be operated under ultra low collector current regimes J(C) less than or equal to 10(-11) A). Experimentally, a long-time sulfur treatment is not appropriate. In this work, the studied device with sulfur treatment for 15 min is a good choice. Furthermore, at measured temperature (298 K-398 K), the studied device with sulfur treatment can reduce collector-emitter offset voltage and the impact of emitter size effect. Moreover, as the temperature is increased, the device with sulfur treatment will exhibit higher dc current gain and more stable temperature-dependent performances. This will extend the application regimes of the studied device in low-power and communication systems.
引用
收藏
页码:1963 / 1971
页数:9
相关论文
共 19 条
[1]   Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's [J].
Borgarino, M ;
Plana, R ;
Delage, SL ;
Fantini, F ;
Graffeuil, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (01) :10-16
[2]   SELF-ALIGNED BIPOLAR EPITAXIAL BASE N-P-N TRANSISTORS BY SELECTIVE EPITAXY EMITTER WINDOW (SEEW) TECHNOLOGY [J].
BURGHARTZ, JN ;
MADER, SR ;
GINSBERG, BJ ;
MEYERSON, BS ;
STORK, JMC ;
STANIS, CL ;
SUN, JY ;
POLCARI, MR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) :378-385
[3]   dc characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT) [J].
Chen, CY ;
Cheng, SY ;
Chiou, WH ;
Chuang, HM ;
Liu, RC ;
Yen, CH ;
Chen, JY ;
Cheng, CC ;
Liu, WC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (04) :874-879
[4]   Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures [J].
Chen, CY ;
Chiou, WH ;
Yen, CH ;
Chuang, HM ;
Chen, JY ;
Cheng, CC ;
Liu, WC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (01) :82-86
[5]   HIGH-CURRENT GAIN, LOW OFFSET VOLTAGE HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS [J].
CHEN, HR ;
CHANG, CY ;
LEE, CP ;
HUANG, CH ;
TSANG, JS ;
TSAI, KL .
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (09) :336-338
[6]   Comprehensive study of InGaP/AlxGa1-xAs/GaAs heterojunction bipolar transistors with doping concentrations of AlxGa1-xAs graded layers [J].
Cheng, SY ;
Chen, JY ;
Chen, CY ;
Chuan, HM ;
Yen, CH ;
Lee, KM ;
Liu, WC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) :351-358
[7]   A study on the transient effect due to hydrogen passivation in InGaPHBTs [J].
Deng, SY ;
Wu, CH ;
Lee, JYM .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (06) :372-374
[8]   Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment [J].
Driad, R ;
Lu, ZH ;
Charbonneau, S ;
McKinnon, WR ;
Laframboise, S ;
Poole, PJ ;
McAlister, SP .
APPLIED PHYSICS LETTERS, 1998, 73 (05) :665-667
[9]   ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SI SUBSTRATE USING EPITAXIAL LIFT-OFF [J].
FAN, JC ;
LEE, CP ;
HWANG, JA ;
HWANG, JH .
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (09) :393-395
[10]   EMITTER SIZE EFFECT ON CURRENT GAIN IN FULLY SELF-ALIGNED ALGAAS/GAAS HBTS WITH ALGAAS SURFACE PASSIVATION LAYER [J].
HAYAMA, N ;
HONJO, K .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (09) :388-390