Absorption anisotropy in sulfur doped gallium selenide crystals studied by THz-TDS

被引:25
作者
Molloy, John F. [1 ]
Naftaly, Mira [1 ]
Andreev, Yury [2 ,3 ]
Kokh, Konstantin [3 ,4 ,5 ]
Lanskii, Gregory [2 ,3 ]
Svetlichnyi, Valery [3 ]
机构
[1] Natl Phys Lab, Teddington TW11 0LW, Middx, England
[2] Russian Acad Sci, Siberian Branch, Inst Monitoring Climat & Ecol Syst, Tomsk 634055, Russia
[3] Tomsk State Univ, Siberian Phys Tech Inst, Tomsk 634050, Russia
[4] Russian Acad Sci, Siberian Branch, Inst Geol & Mineral, Novosibirsk 630090, Russia
[5] Novosibirsk State Univ, Novosibirsk 630090, Russia
基金
英国工程与自然科学研究理事会;
关键词
TIME-DOMAIN SPECTROSCOPY; OPTICAL-ABSORPTION; TERAHERTZ; GASE; GENERATION; PHASE; CONSTANTS; RADIATION; RANGES; SYSTEM;
D O I
10.1364/OME.4.002451
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Top optical quality nonlinear gallium selenide crystals doped with different sulfur concentrations (1.1, 2.5, 5, 7, 11 mass%) are grown by modified Bridgman method. Physical origins of inaccuracy in the measurement of THz o- and e-wave absorption spectra by THz-TDS are identified. Dominant absorption for o-wave is established for all crystal compositions. Frequency independent absorption within 0.3-2 THz is demonstrated. Phonon mode transformation is studied in detail. Phonon absorption peak for e-wave centered at 1.1 THz is recorded for the first time. It is shown that e-wave THz generation is preferable in GaSe:S (2.5-5 mass%) crystal. (C)2014 Optical Society of America
引用
收藏
页码:2451 / 2459
页数:9
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