Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching properties

被引：31

作者：

Niu, G. ^{[1
,2
,3
]}

Schubert, M. A. ^{[3
]}

Sharath, S. U. ^{[4
]}

Zaumseil, P. ^{[3
]}

Vogel, S. ^{[4
]}

Wenger, C. ^{[3
]}

Hildebrandt, E. ^{[4
]}

Bhupathi, S. ^{[3
]}

Perez, E. ^{[3
]}

Alff, L. ^{[4
]}

Lehmann, M. ^{[5
]}

Schroeder, T. ^{[3
,6
]}

Niermann, T. ^{[5
]}

机构：

[1] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China

[2] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Xian 710049, Peoples R China

[3] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[4] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany

[5] Tech Univ Berlin, Inst Opt & Atomare Phys, Str 17,Juni 135, D-10623 Berlin, Germany

[6] BTU Cottbus Senftenberg, Konrad Zuse Str 1, D-03046 Cottbus, Germany

来源：

NANOTECHNOLOGY | 2017年 / 28卷 / 21期

关键词：

RRAM; electron holography; HfO2; resistive switching; multi-level; CONDUCTIVE FILAMENT; MEMORY; DEVICES;

D O I：

10.1088/1361-6528/aa6cd9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico-chemical properties of oxygen-deficient amorphous HfO2-x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2-x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2-x/TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.

引用

页数：7

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