Numerical simulation of a silicon-on-insulator waveguide Fabry-Perot interferometer for intensity light modulators at 1.3 mu m

We present a new silicon-on-insulator (SOI) integrated optics structure to be used as an intensity light modulator at 1.3 mu m. The device consists of a waveguide Fabry-Perot interferometer. In association with a grating coupler this device could function as a spatial light modulator or a reflective-mode modulator. The Fabry-Perot reflectivity is tuned by free-carrier injection from a forward-biased lateral P+/N-/N+ diode. Consequently, the reflected back guided-mode has an intensity that is a function of the effective index modulation in the central waveguide of the Fabry-Perot. Our numerical simulation reveals that such a structure could function for current densities not exceeding 500 A/cm(2), with a cutoff frequency of 100 MHz. This new type of device is compatible with the mature silicon technology and could replace in applications the standard liquid-crystal spatial light modulators or for fiber-to-the-home intensity modulators.