InGaAs-on-Si single photon avalanche photodetectors

被引：37

作者：

Kang, Y ^{[1
]}

Lo, YH

Bitter, M

Kristjansson, S

Pan, Z

Pauchard, A

机构：

[1] Univ Calif San Diego, Jacobs Sch Engn, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Nova Crystals Inc, San Jose, CA 95126 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 10期

关键词：

D O I：

10.1063/1.1788882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, an InGaAs-on-Si single photon avalanche diode (SPAD) for telecommunication wavelengths is presented. This SPAD demonstrates high-single-photon quantum efficiency and low-dark-count probability under gated mode operation. We attributed the good performance of this device to the high absorption coefficient of InGaAs and low noise avalanche multiplication of Si. (C) 2004 American Institute of Physics.

引用

页码：1668 / 1670

页数：3

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