Computer simulation of neutron transmutation doping of isotopically engineered heterostructures

Neutron transmutation doping (NTD) of silicon-based isotopically engineered heterostructures is a powerful technique for the creation of the semiconductor devices with the desired spatial distribution of P-31 impurities that is defined by the initial distribution of Si-30 nuclei. Computer simulation allows to study dopant distribution changes during NTD process and post-irradiation annealing and to determine appropriate annealing regimes. The initial distribution of the radiation defects was obtained by the dynamic Monte Carlo code DYTRIRS_N, while the subsequent annealing stage was simulated by the rate equations (RE) method. Concentrations of intrinsic defects and depth profiles of phosphorus atoms were obtained. (C) 2004 Elsevier B.V. All rights reserved.