Surface modification with a fluorinated N-heterocyclic carbene on Au: effect on contact resistance in organic field-effect transistors

被引:13
作者
Wang, Zhifang [1 ,2 ,3 ]
Das, Mowpriya [4 ]
Gutheil, Christian [4 ]
Osthues, Helena [5 ,6 ]
Strieth-Kalthoff, Felix [4 ]
Timmer, Alexander [7 ]
Doltsinis, Nikos L. [5 ,6 ]
Wang, Wenchong [2 ,3 ]
Chi, Lifeng [1 ,2 ,3 ]
Glorius, Frank [4 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, 199 Renai Rd, Suzhou 215123, Jiangsu, Peoples R China
[2] Westfalische Wilhelms Univ Munster, Phys Inst, Wilhelm Klemm Str 10, D-48149 Munster, Germany
[3] Westfalische Wilhelms Univ Munster, Ctr Nanotechnol CeNTech, Wilhelm Klemm Str 10, D-48149 Munster, Germany
[4] Westfalische Wilhelms Univ Munster, Organ Chem Inst, Corrensstr 36, D-48149 Munster, Germany
[5] Westfalische Wilhelms Univ Munster, Inst Solid State Theory, Wilhelm Klemm Str 10, D-48149 Munster, Germany
[6] Westfalische Wilhelms Univ Munster, Ctr Multiscale Theory & Computat, Wilhelm Klemm Str 10, D-48149 Munster, Germany
[7] NanoAnalytics GmbH, Heisenbergstr 40, D-48149 Munster, Germany
基金
中国国家自然科学基金;
关键词
THIN-FILM TRANSISTORS; PERFORMANCE; INJECTION; BARRIERS;
D O I
10.1039/d2tc01311h
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Providing strong carbon-metal (C-M) bonds, N-heterocyclic carbenes (NHCs) recently were introduced as surface modifiers for various applications. Here we report a fluorinated NHC (F-NHC) monolayer chemically bonded to Au with high thermal stability up to 200 degrees C. The effect of F-NHC modification on contact resistance in organic field-effect transistors (OFETs) was further investigated. In comparison to devices without F-NHC modification, transistors with the F-NHC modified gold electrodes show a significant improvement in carrier mobility in the saturation region owing to the reduced contact resistance (R-c). Density Functional Theory (DFT) calculations indicate that, when bonding to Au, the F-NHC molecule transfers 0.40 e to Au and creates a doping interface between Au and p-type organic semiconductors. The charge transfer between the F-NHC and Au leads to a generation of holes at the F-NHC/organic semiconductor interface, which may cause an efficient carrier tunneling for contact resistance improvement. The work lays the foundation for the future applications of carbenes in organic electronics.
引用
收藏
页码:8589 / 8595
页数:7
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