Epitaxial growth of YO1.5 doped HfO2 films on (100) YSZ substrates with various concentrations

被引：10

作者：

Shimizu, Takao ^{[1
]}

Katayama, Kiliha ^{[2
]}

Funakubo, Hiroshi ^{[1
,2
,3
]}

机构：

[1] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Yokohama, Kanagawa, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa, Japan

[3] Tokyo Inst Technol, Sch Mat & Chem Technol, Yokohama, Kanagawa, Japan

来源：

FERROELECTRICS | 2017年 / 512卷 / 01期

关键词：

HfO2; films; epitaxial growth;

D O I：

10.1080/00150193.2017.1349994

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The epitaxial HfO2 films with various YO1.5 doping concentrations from 5 to 9% were grown by pulsed laser deposition techniques. Careful XRD measurements reveal that all the present films include orthorhombic phase, which is expected to exhibit ferroelectricity. The 5 to 7% YO1.5 doped HfO2 films consist of mainly orthorhombic phase, while the 8 and 9% YO1.5 doped HfO2 films consist of major tetragonal and small amount of orthorhombic phases. The monoclinic phase cannot be obtained within the present YO1.5 concentrations. The mixed orthorhombic and tetragonal phase are possibly accompanied by the thickness dependent stability of the orthorhombic phase.

引用

页码：105 / 110

页数：6

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