Improvement of property of Pb(ZrxTi1-x)O3 thin film prepared by source gas pulse-introduced metalorganic chemical vapor deposition

被引：80

作者：

Nagashima, K ^{[1
]}

Aratani, M ^{[1
]}

Funakubo, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Eng, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 10A期

关键词：

metalorganic chemical vapor deposition; Pb(Zr; Ti)O-3; pulse gas supply;

D O I：

10.1143/JJAP.39.L996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb(Zr, Ti)O-3 (PZT) thin films with Zr/(Zr + Ti) of 0.42 were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 620 degreesC by metalorganic chemical vapor deposition (MOCVD). We attempted the pulse introduction of a mixture of source gases into the reaction chamber and succeeded in simultaneous improvements of the crystallinity, surface roughness and electrical properties of the PZT film by this preparation method. The (111)-orientation increased and the surface roughness decreased. Moreover, the leakage decreased and well-saturated symmetrical polarization-electric field (P-E) hysteresis loop were obtained. Remanent polarization (P-r) and the coercive field (E-c) values of this pulse-MOCVD film were 44 muC/cm(2) and 85 kV/cm, respectively.

引用

页码：L996 / L998

页数：3

共 13 条

[1]

ARATANN M, UNPUB J APPL PHYS

[2] Single-crystal Pb(ZrxTi1-x)O-3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties [J].

Foster, CM ;

Bai, GR ;

Csencsits, R ;

Vetrone, J ;

Jammy, R ;

Wills, LA ;

Carr, E ;

Amano, J .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) :2349-2357

[3]

FUNAKUBO H, 1991, NIPPON SERAM KYO GAK, V99, P1169, DOI 10.2109/jcersj.99.1169

[4] Deposition condition of epitaxially grown PZT films by CVD [J].

Funakubo, Hiroshi ;

Imashita, Katsuhiro ;

Matsuyama, Katsumi ;

Shinozaki, Kazuo ;

Mizutani, Nobuyasu .

Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan, 1994, 102 :795-798

[5] Characterization of epitaxially grown CVD-Pb(Zr, Ti)O3 films with high deposition rate [J].

Funakubo, Hiroshi ;

Imashita, Katsuhiro ;

Shinozaki, Kazuo ;

Mizutani, Nobuyasu .

Journal of the Ceramic Society of Japan. International ed., 1994, 102 (02) :114-118

[6]

MANNISH A, 1990, FERROELECTRICS, V102, P69

[7]

Mansour S. A., 1992, Integrated Ferroelectrics, V1, P57, DOI 10.1080/10584589208215565

[8] ELECTRONIC CONDUCTION CHARACTERISTICS OF SOL-GEL FERROELECTRIC PB(ZR0.4TI0.6)O-3 THIN-FILM CAPACITORS .2. [J].

MIHARA, T ;

WATANABE, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10) :5674-5682

[9] Preparation of superconducting Sr2CuO2(CO3)(1-x)(BO3)(x) films by metalorganic chemical vapor deposition [J].

Miyazaki, Y ;

Yamane, H ;

Hirai, T ;

Kajitani, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (8B) :L1053-L1054

[10] Composition control of Pb(ZrxTi1-x)O3 thin films prepared by metalorganic chemical vapor deposition [J].

Nagashima, K ;

Funakubo, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (01) :212-216

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