The use of analytical peak profile functions to fit diffraction data of planar faulted layer crystals

被引：11
作者：
Estevez-Rams, E
Penton, A
Martinez-Garcia, J
Fuess, H
机构：
[1] Univ Havana, Inst Mat & Reagents, IMRE, Havana 10400 C, Cuba
[2] Univ Havana, Fac Phys, IMRE, Havana 10400 C, Cuba
[3] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2005年 / 40卷 / 1-2期
关键词：
XRD pattern; peak profile functions; stacking faults;
D O I：
10.1002/crat.200410320
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The implication of the use of particular peak profile functions in the fit of diffraction data on the nature and density of stacking faults in layered solids is studied. Common type of profile functions are studied: Gauss, Lorentz, pseudoVoigt and Pearson VII. An additional peak profile is introduced. For each profile function the decaying term of the probability correlation function is determined and the expression for the correlation length is deduced. The form of the asymmetric component of each profile is also reported. Experimental data is fitted using each profile and the results are discussed.
引用
收藏
页码：166 / 176
页数：11
相关论文
共 23 条
  • [1] BALZAR D, 1994, DEFECT MICROSTRUCTUR, P94
  • [2] NEUTRON POWDER-DIFFRACTION STUDIES OF LITHIUM, SODIUM, AND POTASSIUM METAL
    BERLINER, R
    FAJEN, O
    SMITH, HG
    HITTERMAN, RL
    [J]. PHYSICAL REVIEW B, 1989, 40 (18): : 12086 - 12097
  • [3] Diffraction patterns of stacked layer crystals
    Estevez-Rams, E
    Aragon-Fernandez, B
    Fuess, H
    Penton-Madrigal, A
    [J]. PHYSICAL REVIEW B, 2003, 68 (06)
  • [4] On the powder diffraction pattern of crystals with stacking faults
    Estevez-Rams, E
    Leoni, M
    Scardi, P
    Aragon-Fernandez, B
    Fuess, H
    [J]. PHILOSOPHICAL MAGAZINE, 2003, 83 (36) : 4045 - 4057
  • [5] Direct solution of the diffraction pattern of a crystal with planar faulting
    Estevez-Rams, E
    Martinez, J
    Penton-Madrigal, A
    Lora-Serrano, R
    [J]. PHYSICAL REVIEW B, 2001, 63 (05)
  • [6] NEW DIRECT METHOD FOR CHARACTERIZING STRUCTURES WITH STACKING-FAULTS, BUILT UP FROM TRANSLATIONALLY EQUIVALENT LAYERS .2. FAULTS IN 5-LAYER STRUCTURE ELEMENTS
    FARKASJAHNKE, M
    [J]. ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS, 1973, 29 (MAR15): : 413 - 420
  • [7] HOUSKA CR, 1994, DEFECT MICROSTRUCTUR, P141
  • [8] RETM5 AND RE2TM17 PERMANENT-MAGNETS DEVELOPMENT
    KUMAR, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (06) : R13 - R57
  • [9] LANGE-BERTALOT H, 1978, Bacillaria, V1, P11
  • [10] X-RAY-DIFFRACTION FROM CLOSE-PACKED STRUCTURES WITH STACKING-FAULTS .1. HCC CRYSTALS
    LELE, S
    [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1974, A 30 (JUL1): : 509 - 513
123