Dynamic in situ spectroscopic ellipsometric study in inhomogeneous TiO2 thin-film growth

被引:26
作者
Horprathum, M. [1 ]
Chindaudom, P. [1 ]
Limnonthakul, P. [2 ]
Eiamchai, P. [1 ]
Nuntawong, N. [1 ]
Patthanasettakul, V. [1 ]
Pokaipisit, A. [3 ,4 ]
Limsuwan, P. [3 ,4 ]
机构
[1] Natl Elect & Comp Technol Ctr, Photon Technol Lab, Pathum Thani 12120, Thailand
[2] Srinakharinwirot Univ, Fac Sci, Dept Phys, Bangkok 10110, Thailand
[3] Thailand Ctr Excellence Phys, CHE, Bangkok 10400, Thailand
[4] King Mongkuts Univ Technol Thonburi, Dept Phys, Fac Sci, Bangkok 10140, Thailand
关键词
DEPOSITION; TEMPERATURE; NUCLEATION; PRESSURE; PLASMA;
D O I
10.1063/1.3457839
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the film-growth process of the inhomogeneous sputtered TiO2 thin films by the in situ real-time spectroscopic ellipsometer. The growth process of the film is analyzed by both the uniform and the island film growth models. Based on the analyses from the Psi-Delta trajectories, the initial thin-film growth corresponds to the island film growth model for a single-layer film. As the film grows, the microstructural phase changes cause the transition from the single-to the double-layer physical model, because of the development of the inhomogeneity in the TiO2 thin film. The dynamic fits with the double-layer physical model and the Cody-Lorentz optical model indicate three different stages of the film growth: the nucleation stage, the coalescence stage, and the continuous-layer stage. Although our presented model works well for most of the experimental data, the determination of the refractive index at the ultrathin thickness may be problematic. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457839]
引用
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页数:7
相关论文
共 20 条
[1]   Study of TiO2 film growth mechanisms in low-pressure plasma by in situ real-time spectroscopic ellipsometry [J].
Amassian, A ;
Desjardins, P ;
Martinu, L .
THIN SOLID FILMS, 2004, 447 :40-45
[2]   UNAMBIGUOUS DETERMINATION OF THICKNESS AND DIELECTRIC FUNCTION OF THIN-FILMS BY SPECTROSCOPIC ELLIPSOMETRY [J].
ARWIN, H ;
ASPNES, DE .
THIN SOLID FILMS, 1984, 113 (02) :101-113
[4]   INSITU SPECTROELLIPSOMETRIC STUDY OF THE NUCLEATION AND GROWTH OF AMORPHOUS-SILICON [J].
CANILLAS, A ;
BERTRAN, E ;
ANDUJAR, JL ;
DREVILLON, B .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) :2752-2759
[5]   CHARACTERIZATION OF INHOMOGENEOUS TRANSPARENT THIN-FILMS ON TRANSPARENT SUBSTRATES BY SPECTROSCOPIC ELLIPSOMETRY - REFRACTIVE-INDEXES N(LAMBDA) OF SOME FLUORIDE COATING MATERIALS [J].
CHINDAUDOM, P ;
VEDAM, K .
APPLIED OPTICS, 1994, 33 (13) :2664-2671
[6]   INSITU ELLIPSOMETRY OF THIN-FILM DEPOSITION - IMPLICATIONS FOR AMORPHOUS AND MICROCRYSTALLINE SI GROWTH [J].
COLLINS, RW ;
YANG, BY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05) :1155-1164
[7]   EFFECT OF DEPOSITION CONDITIONS ON THE NUCLEATION AND GROWTH OF GLOW-DISCHARGE A-SI-H [J].
COLLINS, RW ;
CAVESE, JM .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1869-1882
[8]   A spectroscopic ellipsometry study of TiO2 thin films prepared by ion-assisted electron-beam evaporation [J].
Eiamchai, Pitak ;
Chindaudom, Pongpan ;
Pokaipisit, Artorn ;
Limsuwan, Pichet .
CURRENT APPLIED PHYSICS, 2009, 9 (03) :707-712
[9]   The effect of argon pressure on the structural and photocatalytic characteristics of TiO2 thin films deposited by d.c. magnetron sputtering [J].
Eufinger, K. ;
Janssen, E. N. ;
Poelman, H. ;
Poelman, D. ;
De Gryse, R. ;
Marin, G. B. .
THIN SOLID FILMS, 2006, 515 (02) :425-429
[10]   Physical properties and photocatalytic efficiencies of TiO2 films prepared by PECVD and sol-gel methods [J].
Guillard, C ;
Debayle, D ;
Gagnaire, A ;
Jaffrezic, H ;
Herrmann, JM .
MATERIALS RESEARCH BULLETIN, 2004, 39 (10) :1445-1458