Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy

被引：18

作者：

Arai, Takanori ^{[1
]}

Timmerman, Dolf ^{[1
]}

Wakamatsu, Ryuta ^{[1
]}

Lee, Dong-gun ^{[1
]}

Koizumi, Atsushi ^{[1
]}

Fujiwara, Yasufumi ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF LUMINESCENCE | 2015年 / 158卷

基金：

日本学术振兴会;

关键词：

Rare earth doping; Europium; Light emission; GaN; LUMINESCENCE; SEMICONDUCTORS; GAN;

D O I：

10.1016/j.jlumin.2014.09.036

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have grown Eu-doped GaN (GaN:Eu)/AlGaN multiple quantum well (MQW:Eu) structures by organometallic vapor phase epitaxy and investigated their Eu luminescence properties. The MQW:Eu structures exhibited enhancement of Eu photoluminescence (PL) intensity with an integrated intensity which was three times higher than that of conventional GaN:Eu structures. PL and time-resolved PL measurements suggest that this enhancement is due to the improvement of the excitation efficiency of Eu ions in the MQW:Eu structure. Following these results, we have successfully fabricated a light-emitting diode based on the MQW:Eu structures, which demonstrated an improved output power efficiency of red light. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：70 / 74

页数：5