Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy

被引：18

作者：

Arai, Takanori ^{[1
]}

Timmerman, Dolf ^{[1
]}

Wakamatsu, Ryuta ^{[1
]}

Lee, Dong-gun ^{[1
]}

Koizumi, Atsushi ^{[1
]}

Fujiwara, Yasufumi ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF LUMINESCENCE | 2015年 / 158卷

基金：

日本学术振兴会;

关键词：

Rare earth doping; Europium; Light emission; GaN; LUMINESCENCE; SEMICONDUCTORS; GAN;

D O I：

10.1016/j.jlumin.2014.09.036

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have grown Eu-doped GaN (GaN:Eu)/AlGaN multiple quantum well (MQW:Eu) structures by organometallic vapor phase epitaxy and investigated their Eu luminescence properties. The MQW:Eu structures exhibited enhancement of Eu photoluminescence (PL) intensity with an integrated intensity which was three times higher than that of conventional GaN:Eu structures. PL and time-resolved PL measurements suggest that this enhancement is due to the improvement of the excitation efficiency of Eu ions in the MQW:Eu structure. Following these results, we have successfully fabricated a light-emitting diode based on the MQW:Eu structures, which demonstrated an improved output power efficiency of red light. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：70 / 74

页数：5

共 50 条

[21] Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy
Lee, Dong-gun
Wakamatsu, Ryuta
Koizumi, Atsushi
Terai, Yoshikazu
Poplawsky, Jonathan D.
Dierolf, Volkmar
Fujiwara, Yasufumi
APPLIED PHYSICS LETTERS, 2013, 102 (14)
[22] GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy
Wang, CA
Choi, HK
APPLIED PHYSICS LETTERS, 1997, 70 (07) : 802 - 804
[23] Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy
Sawahata, Junji
Seo, Jongwon
Takiguchi, Mikio
Saito, Daisuke
Nemoto, Shinya
Akimoto, Katsuhiro
JOURNAL OF CRYSTAL GROWTH, 2007, 301 (420-423) : 420 - 423
[24] Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
Potin, V
Hahn, E
Rosenauer, A
Gerthsen, D
Kuhn, B
Scholz, F
Dussaigne, A
Damilano, B
Grandjean, N
JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) : 145 - 150
[25] Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
Lorenz, K.
Alves, E.
Roqan, I. S.
O'Donnell, K. P.
Nishikawa, A.
Fujiwara, Y.
Bockowski, M.
APPLIED PHYSICS LETTERS, 2010, 97 (11)
[26] Characterization of AlGaN, Te-doped GaN and mg-doped GaN grown by hydride vapor phase epitaxy
Jang, K. S.
Kim, K. H.
Hwang, S. L.
Jeon, H. S.
Ahn, H. S.
Yang, M.
Choi, W. J.
Kim, S. W.
Honda, Y.
Yamaguchi, M.
Sawaki, N.
Yoo, J.
Lee, S. M.
Koike, M.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1, 2007, 4 (01): : 133 - +
[27] Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition
Pan, M
Steckl, AJ
APPLIED PHYSICS LETTERS, 2003, 83 (01) : 9 - 11
[28] Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy
Takatsu, J.
Fuji, R.
Tatebayashi, J.
Timmerman, D.
Lesage, A.
Gregorkiewicz, T.
Fujiwara, Y.
JOURNAL OF APPLIED PHYSICS, 2018, 123 (16)
[29] Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy
1600, American Institute of Physics Inc. (123):
[30] Photoinduced defects in a-Si:H Films and InGaN/GaN multiple quantum well structures doped with Eu, Sm, and Eu + Sm
M. M. Mezdrogina
E. I. Terukov
I. N. Trapeznikova
Yu. V. Kozhanova
Technical Physics, 2015, 60 : 1353 - 1360

← 1 2 3 4 5 →