Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy

被引：18
|
作者：
Arai, Takanori [1 ]
Timmerman, Dolf [1 ]
Wakamatsu, Ryuta [1 ]
Lee, Dong-gun [1 ]
Koizumi, Atsushi [1 ]
Fujiwara, Yasufumi [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Suita, Osaka 5650871, Japan
来源：
JOURNAL OF LUMINESCENCE | 2015年 / 158卷
基金：
日本学术振兴会;
关键词：
Rare earth doping; Europium; Light emission; GaN; LUMINESCENCE; SEMICONDUCTORS; GAN;
D O I：
10.1016/j.jlumin.2014.09.036
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have grown Eu-doped GaN (GaN:Eu)/AlGaN multiple quantum well (MQW:Eu) structures by organometallic vapor phase epitaxy and investigated their Eu luminescence properties. The MQW:Eu structures exhibited enhancement of Eu photoluminescence (PL) intensity with an integrated intensity which was three times higher than that of conventional GaN:Eu structures. PL and time-resolved PL measurements suggest that this enhancement is due to the improvement of the excitation efficiency of Eu ions in the MQW:Eu structure. Following these results, we have successfully fabricated a light-emitting diode based on the MQW:Eu structures, which demonstrated an improved output power efficiency of red light. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：70 / 74
页数：5
相关论文
共 50 条
  • [1] Improved Eu Luminescence Properties in Eu-Doped GaN Grown on GaN Substrates by Organometallic Vapor Phase Epitaxy
    Kasai, Hitoshi
    Nishikawa, Atsushi
    Kawasaki, Takashi
    Furukawa, Naoki
    Terai, Yoshikazu
    Fujiwara, Yasufumi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04) : 0480011 - 0480012
  • [2] Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy
    Fujiwara, Yasufumi
    Dierolf, Volkmar
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
  • [3] Growth temperature dependence of EU-doped GaN grown by organometallic vapor phase epitaxy
    Nishikawa A.
    Kawasaki T.
    Furukawa N.
    Terai Y.
    Fujiwara Y.
    Zairyo/Journal of the Society of Materials Science, Japan, 2010, 59 (09) : 671 - 674
  • [4] Fluorescence XAFS Analysis of Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy
    Ofuchi, Hironori
    Honma, Tetsuo
    Kawasaki, Takeshi
    Furukawa, Naoki
    Nishikawa, Atsushi
    Fujiwara, Yasufumi
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2011, 9 : 51 - 53
  • [5] Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy
    Kawasaki, Takashi
    Nishikawa, Atsushi
    Furukawa, Naoki
    Terai, Yoshikazu
    Fujiwara, Yasufumi
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
  • [6] Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy
    Furukawa, Naoki
    Nishikawa, Atsushi
    Kawasaki, Takashi
    Terai, Yoshikazu
    Fujiwara, Yasufumi
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (02): : 445 - 448
  • [7] Afterglow of Eu-related emission in Eu-doped gallium nitride grown by organometallic vapor phase epitaxy
    Wakamatsu, R.
    Timmerman, D.
    Lee, D.
    Koizumi, A.
    Fujiwara, Y.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (04)
  • [8] Eu-Doped GaN Films Grown by Phase Shift Epitaxy
    Zhong, Mingyu
    Steckl, Andrew J.
    APPLIED PHYSICS EXPRESS, 2010, 3 (12)
  • [9] Eu-doped GaN films grown by phase shift epitaxy
    Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, OH 45221-0030, United States
    Appl. Phys. Express, 12
  • [10] High-Power Eu-Doped GaN Red LED Based on a Multilayer Structure Grown at Lower Temperatures by Organometallic Vapor Phase Epitaxy
    W. Zhu
    B. Mitchell
    D. Timmerman
    A. Koizumi
    T. Gregorkiewicz
    Y. Fujiwara
    MRS Advances, 2017, 2 (3) : 159 - 164
12345