Reliability Study of a RF Power Amplifier with GaN-on-SiC HEMTs

被引：0

作者：

Lang, J. ^{[1
]}

Lim, J-K. ^{[2
]}

Hellen, J. ^{[3
]}

Nilsson, T. M. J. ^{[3
]}

Schodt, B. ^{[4
]}

Poder, R. ^{[4
]}

Belov, I. ^{[5
]}

Bakowski, M. ^{[2
]}

Leisner, P. ^{[1
]}

机构：

[1] SP Tech Res Inst Sweden, Box 857, S-50115 Boras, Sweden

[2] Acreo Swedish ICT, Box 1070, S-16425 Kista, Sweden

[3] Saab AB, Solhusgatan 10, S-41276 Gothenburg, Sweden

[4] SP Tech Res Inst Sweden, AC Meyers V 15, DK-2450 Copenhagen, Denmark

[5] Jonkoping Univ, Sch Engn, Box 1026, S-55111 Jonkoping, Sweden

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 6 | 2016年 / 75卷 / 12期

基金：

瑞典研究理事会;

关键词：

ALGAN/GAN HEMTS; FIELD;

D O I：

10.1149/07512.0049ecst

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. Two types of lead-free solders (Sn63Pb36Ag2 and SnAgCu (SAC305)) and two types of TIM materials (NanoTIM and Tgon (TM) 805) for PCB attachment to liquid cold plate were tested for thermo-mechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed.

引用

页码：49 / 59

页数：11

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