Influences of rapid thermal annealing on the characteristics of Al2O3\La2O3\Si and La2O3\Al2O3\Si films deposited by atomic layer deposition

被引：10

作者：

Fei, Chenxi ^{[1
]}

Liu, Hongxia ^{[1
]}

Wang, Xing ^{[1
]}

Zhao, Dongdong ^{[1
]}

Wang, Shulong ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2016年 / 27卷 / 08期

基金：

中国国家自然科学基金;

关键词：

ELECTRICAL-PROPERTIES; LAALO3; LA2O3; LA; HFO2; AL;

D O I：

10.1007/s10854-016-4872-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comparative study of different sequences of two metal precursors [trimethylaluminum (TMA) and Tris(isopropylcyclopentadienyl) lanthanum (La((PrCp)-Pr-i)(3))] for atomic layer deposition (ALD) lanthanum aluminum oxide (La2O3/Al2O3/Si) films is carried out. The percentage compositions of C and N impurity of La2O3/Al2O3/Si and Al2O3/La2O3/Si films were investigated using in situ X-ray photoelectron spectroscopy (XPS). The preliminary testing results indicate that the impurity level of films grown with different sequences before and after annealing can be well controlled. The effects of different deposition sequences on the electrical characteristics and physical properties of La2O3/Al2O3/Si and Al2O3/La2O3/Si films before and after annealing are studied by atomic force microscopy (AFM) and C-V curves. Analysis indicates the rapid thermal annealing (RTA) has significant effects on the surface roughness, equivalent oxide thickness (EOT), dielectric constant, electrical properties, and stability of different sequences of films. Additional the change of chemical bond types of RTA effects on the properties of La2O3/Al2O3/Si and Al2O3/La2O3/Si films are also investigated by XPS.

引用

页码：8550 / 8558

页数：9

共 31 条

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