GaN-based distributed Bragg reflector for high-brightness LED and solid-state lighting

被引：17

作者：

Wang, Dong-Xue ^{[1
]}

Ferguson, Ian T. ^{[1
]}

Buck, John A. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

APPLIED OPTICS | 2007年 / 46卷 / 21期

关键词：

D O I：

10.1364/AO.46.004763

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A comprehensive numerical model for distributed Bragg reflectors (DBRs) based on thin-film optics is developed. Detailed refractive-index calculations for GaN, AIN, AlGaN, and InGaN can also be included in this numerical model. This model can predict DBR performances for refractive-index variations, layer-thickness fluctuations, and the number of quarter-wave stack pairs in DBR as well different light polarizations. (c) 2007 Optical Society of America.

引用

页码：4763 / 4767

页数：5

共 12 条

[1]

ADACHI A, 1992, PHYS PROPERTIES 3 4, pN2672

[2] Optical constants of epitaxial AlGaN films and their temperature dependence [J].

Brunner, D ;

Angerer, H ;

Bustarret, E ;

Freudenberg, F ;

Hopler, R ;

Dimitrov, R ;

Ambacher, O ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5090-5096

[3] Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction [J].

Diagne, M ;

He, Y ;

Zhou, H ;

Makarona, E ;

Nurmikko, AV ;

Han, J ;

Waldrip, KE ;

Figiel, JJ ;

Takeuchi, T ;

Krames, M .

APPLIED PHYSICS LETTERS, 2001, 79 (22) :3720-3722

[4] High-reflectivity GaN GaAlN Bragg mirrors at blue green wavelengths grown by molecular beam epitaxy [J].

Langer, R ;

Barski, A ;

Simon, J ;

Pelekanos, NT ;

Konovalov, O ;

André, R ;

Dang, LS .

APPLIED PHYSICS LETTERS, 1999, 74 (24) :3610-3612

[5] Improved refractive index formulas for the AlxGa1-xN and InyGa1-yN alloys [J].

Laws, GM ;

Larkins, EC ;

Harrison, I ;

Molloy, C ;

Somerford, D .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1108-1115

[6] Refractive index of InGaN/GaN quantum well [J].

Leung, MMY ;

Djurisic, AB ;

Li, EH .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) :6312-6317

[7] Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire [J].

Nakada, N ;

Nakaji, M ;

Ishikawa, H ;

Egawa, T ;

Umeno, M ;

Jimbo, T .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1804-1806

[8] High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy [J].

Ng, HM ;

Moustakas, TD ;

Chu, SNG .

APPLIED PHYSICS LETTERS, 2000, 76 (20) :2818-2820

[9] Refractive index of AlGaInN alloys [J].

Peng, T ;

Piprek, J .

ELECTRONICS LETTERS, 1996, 32 (24) :2285-2286

[10]

Piprek J., 2003, Semiconductor Optoelectronic Devices-Introduction to Physics and Simulation

← 1 2 →