GaN-based distributed Bragg reflector for high-brightness LED and solid-state lighting

被引：17

作者：

Wang, Dong-Xue ^{[1
]}

Ferguson, Ian T. ^{[1
]}

Buck, John A. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

APPLIED OPTICS | 2007年 / 46卷 / 21期

关键词：

D O I：

10.1364/AO.46.004763

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A comprehensive numerical model for distributed Bragg reflectors (DBRs) based on thin-film optics is developed. Detailed refractive-index calculations for GaN, AIN, AlGaN, and InGaN can also be included in this numerical model. This model can predict DBR performances for refractive-index variations, layer-thickness fluctuations, and the number of quarter-wave stack pairs in DBR as well different light polarizations. (c) 2007 Optical Society of America.

引用

页码：4763 / 4767

页数：5

共 12 条

[1] ADACHI A, 1992, PHYS PROPERTIES 3 4, pN2672
[2] Optical constants of epitaxial AlGaN films and their temperature dependence
Brunner, D
Angerer, H
Bustarret, E
Freudenberg, F
Hopler, R
Dimitrov, R
Ambacher, O
Stutzmann, M
[J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) : 5090 - 5096
[3] Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
Diagne, M
He, Y
Zhou, H
Makarona, E
Nurmikko, AV
Han, J
Waldrip, KE
Figiel, JJ
Takeuchi, T
Krames, M
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (22) : 3720 - 3722
[4] High-reflectivity GaN GaAlN Bragg mirrors at blue green wavelengths grown by molecular beam epitaxy
Langer, R
Barski, A
Simon, J
Pelekanos, NT
Konovalov, O
André, R
Dang, LS
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (24) : 3610 - 3612
[5] Improved refractive index formulas for the AlxGa1-xN and InyGa1-yN alloys
Laws, GM
Larkins, EC
Harrison, I
Molloy, C
Somerford, D
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) : 1108 - 1115
[6] Refractive index of InGaN/GaN quantum well
Leung, MMY
Djurisic, AB
Li, EH
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) : 6312 - 6317
[7] Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
Nakada, N
Nakaji, M
Ishikawa, H
Egawa, T
Umeno, M
Jimbo, T
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1804 - 1806
[8] High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy
Ng, HM
Moustakas, TD
Chu, SNG
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (20) : 2818 - 2820
[9] Refractive index of AlGaInN alloys
Peng, T
Piprek, J
[J]. ELECTRONICS LETTERS, 1996, 32 (24) : 2285 - 2286
[10] Piprek J., 2003, Semiconductor Optoelectronic Devices-Introduction to Physics and Simulation

← 1 2 →