MgAl2O4(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target

被引：39

作者：

Belmoubarik, Mohamed ^{[1
]}

Sukegawa, Hiroaki ^{[1
]}

Ohkubo, Tadakatsu ^{[1
]}

Mitani, Seiji ^{[1
]}

Hono, Kazuhiro ^{[1
]}

机构：

[1] Natl Inst Mat Sci, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 13期

关键词：

ROOM-TEMPERATURE; MAGNETORESISTANCE;

D O I：

10.1063/1.4945049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a fabrication process of an epitaxial MgAl2O4 barrier for magnetic tunnel junctions (MTJs) using a direct sputtering method from an MgAl2O4 spinel sintered target. Annealing the sputter-deposited MgAl2O4 layer sandwiched between Fe electrodes led to the formation of a (001)-oriented cation-disorder spinel with atomically sharp interfaces and lattice-matching with the Fe electrodes. A large tunnel magnetoresistance ratio up to 245% at 297K (436% at 3K) was achieved in the Fe/MgAl2O4/Fe(001) MTJ as well as an excellent bias voltage dependence. These results indicate that the direct sputtering is an alternative method for the realization of high performance MTJs with a spinel-based tunnel barrier. (C) 2016 AIP Publishing LLC.

引用

页数：5

共 32 条

[1] Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions
Belashchenko, KD
Velev, J
Tsymbal, EY
[J]. PHYSICAL REVIEW B, 2005, 72 (14)
[2] Influence of misfit dislocations on the magnetoresistance of MgO-based epitaxial magnetic tunnel junctions
Bonell, F.
Andrieu, S.
Tiusan, C.
Montaigne, F.
Snoeck, E.
Belhadji, B.
Calmels, L.
Bertran, F.
Le Fevre, P.
Taleb-Ibrahimi, A.
[J]. PHYSICAL REVIEW B, 2010, 82 (09)
[3] Novel Stack Structure of Magnetic Tunnel Junction with MgO Tunnel Barrier Prepared by Oxidation Methods: Preferred Grain Growth Promotion Seed Layers and Bi-layered Pinned Layer
Choi, Young-suk
Tsunematsu, Hiroshi
Yamagata, Shinji
Okuyama, Hiroki
Nagamine, Yoshinori
Tsunekawa, Koji
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (12)
[4] Large tunnel magnetoresistance with plasma oxidized MgO barrier
Dimopoulos, T
Gieres, G
Wecker, J
Wiese, N
Luo, Y
Samwer, K
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
[5] 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
Djayaprawira, DD
Tsunekawa, K
Nagai, M
Maehara, H
Yamagata, S
Watanabe, N
Yuasa, S
Suzuki, Y
Ando, K
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (09) : 1 - 3
[6] Inelastic electron tunneling spectra of MgO-based magnetic tunnel junctions with different electrode designs
Drewello, Volker
Schaefers, Markus
Schebaum, Oliver
Khan, Ayaz Arif
Muenchenberger, Jana
Schmalhorst, Jan
Reiss, Guenter
Thomas, Andy
[J]. PHYSICAL REVIEW B, 2009, 79 (17)
[7] Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy
Gajek, M.
Nowak, J. J.
Sun, J. Z.
Trouilloud, P. L.
O'Sullivan, E. J.
Abraham, D. W.
Gaidis, M. C.
Hu, G.
Brown, S.
Zhu, Y.
Robertazzi, R. P.
Gallagher, W. J.
Worledge, D. C.
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (13)
[8] Interfacial electronic transport phenomena in single crystalline Fe-MgO-Fe thin barrier junctions
Gangineni, R. B.
Bellouard, C.
Duluard, A.
Negulescu, B.
Baraduc, C.
Gaudin, G.
Tiusan, C.
[J]. APPLIED PHYSICS LETTERS, 2014, 104 (18)
[9] Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature
Ikeda, S.
Hayakawa, J.
Ashizawa, Y.
Lee, Y. M.
Miura, K.
Hasegawa, H.
Tsunoda, M.
Matsukura, F.
Ohno, H.
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (08)
[10] Spin-orbit coupling effect by minority interface resonance states in single-crystal magnetic tunnel junctions
Lu, Y.
Yang, H. -X.
Tiusan, C.
Hehn, M.
Chshiev, M.
Duluard, A.
Kierren, B.
Lengaigne, G.
Lacour, D.
Bellouard, C.
Montaigne, F.
[J]. PHYSICAL REVIEW B, 2012, 86 (18)

← 1 2 3 4 →