Design and evaluation of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized double top BSF layer

被引：31

作者：

Dutta, J. P. ^{[1
]}

Nayak, P. P. ^{[1
]}

Mishra, G. P. ^{[1
]}

机构：

[1] Siksha O Anusandhan Univ, Inst Tech Educ & Res, Dept Elect & Instrumentat Engn, Khandagiri Sq, Bhubaneswar 751030, Odisha, India

来源：

OPTIK | 2016年 / 127卷 / 08期

关键词：

Back surface field layer (BSF); Spectral response; Open circuit voltage (V-OC); Short circuit current density (J(SC)); Fill factor (FF);

D O I：

10.1016/j.ijleo.2016.01.041

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The presence and performance of the tunnel junction layer and back surface field (BSF) layers is the chief reason behind the high efficiency of the multi-junction solar cells. In this work, the focus is on the selection of a suitable material for the tunnel junction along with introducing a new top BSF layer. The simulation work is carried out in ATLAS TCAD. The various performance parameters like open circuit voltage (V-OC), short circuit current density (J(SC)), fill factor (FF) and efficiency (eta) are extracted from the proposed solar cell model and are compared with published results to ascertain the accuracy of the present work. Other parameters like the photogeneration rate, spectral response, potential developed, electric field are also determined. I-V curve and the power curve are also plotted for the proposed model. For this proposed structure V-OC = 2.668 V, J(SC) = 18.2 mA/cm(2), FF= 88.29% and eta = 40.879% are obtained for 1000 suns illuminated under standard AM1.5G spectrum. The obtained outputs and the modeling steps are elaborately explained. (C) 2016 Elsevier GmbH. All rights reserved.

引用

页码：4156 / 4161

页数：6

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