High breakdown voltage p-n diodes on GaN on sapphire by MOCVD

被引：53

作者：

Gupta, Chirag ^{[1
]}

Enatsu, Yuuki ^{[1
]}

Gupta, Geetak ^{[1
]}

Keller, Stacia ^{[1
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept ECE, Santa Barbara, CA 93106 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2016年 / 213卷 / 04期

关键词：

breakdown voltage; doping; GaN; p-n diodes; sapphire; threading dislocations; DISLOCATION-DENSITY; JUNCTION DIODES; RECTIFIERS; SCHOTTKY; GROWTH;

D O I：

10.1002/pssa.201532554

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to achieve high breakdown voltage in GaN vertical power devices, low threading dislocation density and low background carrier concentration is required. This work demonstrates a decrease in the background carrier concentration and threading dislocation density (TDD) with an increase in the thickness of un-intentionally doped (UID) GaN grown on sapphire. p-n diodes grown and fabricated on this epi, using 4.8 mu m UID GaN, showed a breakdown voltage of 730 V, breakdown field of 1.75 MV cm(-1) and an on-resistance of 5.1 m Omega cm(2). The figure of merit (FOM), V-BR(2)/R-ON, thus obtained is approximately 105 MW cm(.)(-2) This is the highest reported FOM value for p-n diodes on GaN on sapphire or Si. Lowering the carrier concentration and dislocation density is thus shown to be critical for achieving high breakdown voltages on GaN on sapphire. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：878 / 882

页数：5

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