Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles

被引：11

作者：

Kageshima, Hiroyuki ^{[1
]}

Hibino, Hiroki ^{[1
]}

Nagase, Masao ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

Graphene; Epitaxial growth; Mechanism; LEEM; First-principles calculation; GRAPHITE;

D O I：

10.4028/www.scientific.net/MSF.645-648.597

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Epitaxial graphene growth on SiC is investigated using low-energy electron microscopy (LEEM) and first-principles calculations. LEEM is one of the most powerful tools to identify the thickness of graphene on SiC with a good spatial resolution. With the help of such LEEM, the thickness-dependent physical properties are identified by various experiments. It is shown that epitaxial graphene sheets continue even over steps of the substrate, and that a new graphene sheet often grows from step edges while the surface morphology changes drastically. Furthermore, the first-principles calculations also show the energetics of the epitaxial graphene growth on SiC. It is expected that the fine control of epitaxial graphene growth on SiC will open the way to novel graphene devices in the post-scaling era of the ultra-large-scale integrations (ULSI).

引用

页码：597 / 602

页数：6

共 20 条

[1] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
Berger, C
Song, ZM
Li, TB
Li, XB
Ogbazghi, AY
Feng, R
Dai, ZT
Marchenkov, AN
Conrad, EH
First, PN
de Heer, WA
[J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) : 19912 - 19916
[2] Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
Fissel, A
[J]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2003, 379 (3-4): : 149 - 255
[3] Peculiar localized state at zigzag graphite edge
Fujita, M
Wakabayashi, K
Nakada, K
Kusakabe, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1996, 65 (07) : 1920 - 1923
[4] Graphene: Status and Prospects
Geim, A. K.
[J]. SCIENCE, 2009, 324 (5934) : 1530 - 1534
[5] Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons
Hibino, H.
Kageshima, H.
Maeda, F.
Nagase, M.
Kobayashi, Y.
Yamaguchi, H.
[J]. PHYSICAL REVIEW B, 2008, 77 (07):
[6] Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy
Hibino, H.
Kageshima, H.
Maeda, F.
Nagase, M.
Kobayashi, Y.
Kobayashi, Y.
Yamaguchi, H.
[J]. E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2008, 6 : 107 - 110
[7] Stacking domains of epitaxial few-layer graphene on SiC(0001)
Hibino, H.
Mizuno, S.
Kageshima, H.
Nagase, M.
Yamaguchi, H.
[J]. PHYSICAL REVIEW B, 2009, 80 (08)
[8] Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy
Hibino, H.
Kageshima, H.
Kotsugi, M.
Maeda, F.
Guo, F.-Z.
Watanabe, Y.
[J]. PHYSICAL REVIEW B, 2009, 79 (12):
[9] Hibino H., J PHYS D IN PRESS
[10] JOBST J, ARXIV09081900CONDMAT

← 1 2 →