First report on effect of freezing of charge carriers on conductivity of CoxZn1_ xS ternary semiconductor compounds at low temperatures

被引:4
作者
Rao, V. Laxminarasimha [1 ,3 ]
Reddy, Y. Vasudeva [2 ,4 ]
Shekharam, T. [3 ]
Nagabhushanam, M. [4 ]
机构
[1] Govt Polytech Coll, Dept Phys, Kotagiri, Telangana, India
[2] Govt City Coll A, Dept Phys, Hyderabad, Telangana, India
[3] Matrusri Engn Coll, Dept Phys, Hyderabad, Telangana, India
[4] Univ Coll Sci, Osmania Univ, Dept Phys, Hyderabad 500007, Telangana, India
关键词
Co-precipitation technique; DC conductivity; Activation energy; Variable range hopping; THIN-FILMS; PHOTOLUMINESCENCE PROPERTIES; MAGNETIC-PROPERTIES; OPTICAL-PROPERTIES; ZNS; LUMINESCENCE;
D O I
10.1016/j.cplett.2022.139571
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Polycrystalline ternary semiconductor compounds with the compositional formula CoxZn(1_ x)S (0 <= x & nbsp;& nbsp;<=& nbsp;0.1) samples have been synthesized by a controlled co-precipitation technique. The samples are characterized by X-ray diffraction (XRD) method. DC conductivity studies were performed in the temperature region 77-300 K. The dc conductivity plots show the Arrhenius behavior with three different activation energies (Ea) in three different temperature regions I (300-165 K), II (165-100 K), III (100-77 K), and they exhibited the variable range hopping conduction (VRH) mechanism at low temperature region (100-77 K).
引用
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页数:4
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