Nanometer-scale Ge selective growth on Si(001) using ultrathin SiO2 film

被引：23

作者：

Nitta, Y ^{[1
]}

Shibata, M ^{[1
]}

Fujita, K ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] Natl Inst Adv Interdisciplinary Res, NAIR, ATP, JRCAT, Tsukuba, Ibaraki 3050046, Japan

来源：

SURFACE SCIENCE | 2000年 / 462卷 / 1-3期

关键词：

epitaxy; germanium; oxidation; scanning tunneling microscopy; silicon; silicon oxides;

D O I：

10.1016/S0039-6028(00)00547-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We performed nanometer-scale Ge selective growth using ultrathin silicon dioxide film on Si(001) surfaces. Growth was observed in real time by scanning tunneling microscopy (STM). Window areas with a size of 10-50 nm were fabricated using two different methods: void formation during thermal decomposition of the oxide and field-emission electron-beam irradiation from an STM tip. Selective epitaxial growth was achieved by introducing germane gas (GeH4). With the first method, 3D nucleations occurred near the periphery of the voids and several Ce clusters of irregular shape grew. With the second method, 3D nucleations occurred at the center of the window, and several clusters coalesced forming one hut cluster. The second method was used to form a nanometer-scale Ge dot array. (C) 2000 Elsevier Science B.V, All rights reserved.

引用

页码：L587 / L593

页数：7

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