Optical properties of material compositions in hydrogenated amorphous silicon through the degree of passivation

被引:0
|
作者
Kassmi, M. [1 ]
Samti, R. [2 ]
Dimassi, W. [1 ]
Amlouk, M. [3 ]
机构
[1] Ctr Rech & Technol Energie, PB 95, Hammam Lif 2050, Tunisia
[2] Univ Tunis Carthage, IPEST Marsa, Inst Preparatoire Etud Sci & Tech, Tunis, Tunisia
[3] Univ Tunis El Manar, Fac Sci Tunis, Lab Nanomat Nanotechnol & Energie L2NE, Tunis 2092, Tunisia
关键词
Hydrogenated amorphous silicon; Thin films; RF-PECVD technique; IR; Ellipsometry; Passivation; ABSORPTION EDGE; GLOW-DISCHARGE; MICROSTRUCTURE; DISORDER;
D O I
10.1016/j.jnoncrysol.2021.120771
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This work manages the use of both the bending vibration modes gave by IR examinations and ellipsometric information to perceive the optical behavior of dynamic setups of hydrogenated amorphous silicon thin films arranged by RF-PECVD process. An uncommon accentuation is put because of the hydrogenation stream in amorphous silicon on the idea of shaped locales. The outcomes especially show the development of three kinds of locales with different sizes: sites with just dangling bonds, totally passivated locales just as partially passivated hydrogen sites, the last show an optical behavior in the visible range contingent upon the level of passivation.
引用
收藏
页数:6
相关论文
共 50 条
  • [31] Optical limiting in hydrogenated amorphous silicon-selenium thin films
    Manaa, Hacene
    Al-Mulla, Abdullah
    Al-Jamal, Noor
    Al-Dallal, Shawqi
    Al-Alawi, Saleh
    THIN SOLID FILMS, 2010, 518 (14) : 3933 - 3937
  • [32] Comparison of Passivation Property on Hydrogenated Silicon Nitrides whose Antireflection Properties are Identical
    Kim, Jae Eun
    Lee, Kyung Dong
    Kang, Yoonmook
    Lee, Hae-Seok
    Kim, Donghwan
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2016, 26 (01): : 47 - 53
  • [33] Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide
    Ge, Jia
    Tang, Muzhi
    Wong, Johnson
    Zhang, Zhenhao
    Dippell, Torsten
    Doerr, Manfred
    Hohn, Oliver
    Huber, Marco
    Wohlfart, Peter
    Aberle, Armin G.
    Mueller, Thomas
    INTERNATIONAL JOURNAL OF PHOTOENERGY, 2014, 2014
  • [34] The role that conduction band tail states play in determining the optical response of hydrogenated amorphous silicon
    Thevaril, Jasmin J.
    O'Leary, Stephen K.
    SOLID STATE COMMUNICATIONS, 2011, 151 (09) : 730 - 733
  • [35] DEPOSITION AND OPTICAL-PROPERTIES OF AMORPHOUS HYDROGENATED SIXCY LAYERS
    CHUMAKOV, AA
    BULKIN, PV
    SWART, PL
    LACQUET, BM
    SCHERBAKOV, AA
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 151 - 153
  • [36] Microstructure of Hydrogenated Amorphous Silicon Layers Studied by Spectroscopic Ellipsometry for the Surface Passivation in Heterojunction Solar Cells
    Guo, Wanwu
    Zhang, Liping
    Bao, Jian
    Meng, Fanying
    Chen, Yifeng
    Lee, Esther
    Feng, Zhiqiang
    Verlinden, Pierre J.
    Liu, Zhengxin
    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
  • [37] Hydrogenated amorphous silicon based surface passivation of c-Si at high deposition temperature and rate
    Illiberi, A.
    Creatore, M.
    Kessels, W. M. M.
    de Sanden, M. C. M. van
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4 (8-9): : 206 - 208
  • [38] Effect of keV ion irradiation on mechanical properties of hydrogenated amorphous silicon
    Danesh, P.
    Pantchev, B.
    Wiezorek, J.
    Schmidt, B.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (17-18) : 2660 - 2665
  • [39] Electronic properties of hydrogenated amorphous silicon prepared in expanding thermal plasmas
    Brinza, M
    Adriaenssens, GJ
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (01): : 73 - 81
  • [40] Mechanical properties of hydrogenated amorphous silicon (a-Si:H) particles
    Jiang, Taizhi
    Khabaz, Fardin
    Marne, Aniket
    Wu, Chenglin
    Gearba, Raluca
    Bodepudi, Revanth
    Bonnecaze, Roger T.
    Liechti, Kenneth M.
    Korgel, Brian A.
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (20)