Optical properties of material compositions in hydrogenated amorphous silicon through the degree of passivation

被引：0

作者：

Kassmi, M. ^{[1
]}

Samti, R. ^{[2
]}

Dimassi, W. ^{[1
]}

Amlouk, M. ^{[3
]}

机构：

[1] Ctr Rech & Technol Energie, PB 95, Hammam Lif 2050, Tunisia

[2] Univ Tunis Carthage, IPEST Marsa, Inst Preparatoire Etud Sci & Tech, Tunis, Tunisia

[3] Univ Tunis El Manar, Fac Sci Tunis, Lab Nanomat Nanotechnol & Energie L2NE, Tunis 2092, Tunisia

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2021年 / 562卷

关键词：

Hydrogenated amorphous silicon; Thin films; RF-PECVD technique; IR; Ellipsometry; Passivation; ABSORPTION EDGE; GLOW-DISCHARGE; MICROSTRUCTURE; DISORDER;

D O I：

10.1016/j.jnoncrysol.2021.120771

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work manages the use of both the bending vibration modes gave by IR examinations and ellipsometric information to perceive the optical behavior of dynamic setups of hydrogenated amorphous silicon thin films arranged by RF-PECVD process. An uncommon accentuation is put because of the hydrogenation stream in amorphous silicon on the idea of shaped locales. The outcomes especially show the development of three kinds of locales with different sizes: sites with just dangling bonds, totally passivated locales just as partially passivated hydrogen sites, the last show an optical behavior in the visible range contingent upon the level of passivation.

引用

页数：6

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