Poole-Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide

被引：1

作者：

Shiryaev, A. A. ^{[1
]}

Vorotyntsev, V. M. ^{[2
]}

Shobolov, E. L. ^{[1
]}

机构：

[1] Sedakov Measuring Syst Res Inst, Res & Dev Ctr, Nizhnii Novgorod 603137, Russia

[2] Alekseev Nizhny Novgorod State Tech Univ, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 09期

关键词：

ON-INSULATOR STRUCTURES; BURIED OXIDES; IRRADIATED SIMOX; ELECTRON; SIO2; CONDUCTION; MECHANISM; STATES; FILMS; LAYER;

D O I：

10.1134/S1063782618090166

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is proposed that the Poole-Frenkel effect be applied to predict radiation-induced charge accumulation in thermal silicon dioxide. Various conduction mechanisms of thermal silicon dioxide are considered, the conditions of the appearance of the Poole-Frenkel effect in it are determined, and the characteristics of donor centers participating in Poole-Frenkel electrical conductivity are calculated. A donor center level at an energy of 2.34 eV below the conduction-band bottom is determined and the concentration of ionized donor centers of 1.0 x 10(9) cm(-3) at 400 K and a field strength of 10 MV/cm is found. It is concluded that the Poole-Frenkel effect can be applied not for prediction of the absolute value of the radiation-induced charge but for comparison of the samples in terms of the ability to accumulate it.

引用

页码：1114 / 1117

页数：4

共 24 条

[1] Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide
A. A. Shiryaev
V. M. Vorotyntsev
E. L. Shobolov
Semiconductors, 2018, 52 : 1114 - 1117
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PINGUET, J
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[3] Prediction of the Magnitude of the Trapped Charge in the Buried Oxide of Silicon-on-Insulator Structures Using the Poole-Frenkel Effect
Shiryaev, A. A.
Vorotyntsev, V. M.
Shobolov, E. L.
SEMICONDUCTORS, 2020, 54 (05) : 518 - 522
[4] SPACE CHARGE LIMITED CURRENT CONTROLLED BY POOLE-FRENKEL EFFECT
BARBE, DF
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (04): : 501 - &
[5] POOLE-FRENKEL EFFECT IN UNDOPED AND DOPED SILICON OXIDE FILMS
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THIN SOLID FILMS, 1971, 8 (03) : R16 - &
[6] Influence of the Poole-Frenkel effect on programming and erasing in charge trapping memories
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[7] Accumulation of Space Charges in Epoxy Resin Nanodielectrics Influenced by Poole-Frenkel Effect
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Xing, Zhaoliang
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[8] The Poole-Frenkel effect with allowance for multiphonon deep-center ionization in amorphous silicon nitride
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Physics of the Solid State, 2005, 47 : 2233 - 2236
[9] The Poole-Frenkel effect with allowance for multiphonon deep-center ionization in amorphous silicon nitride
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PHYSICS OF THE SOLID STATE, 2005, 47 (12) : 2233 - 2236
[10] THERMAL-FIELD POOLE-FRENKEL EFFECT IN GASEXTE1-X SINGLE-CRYSTALS
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1214 - 1216

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