Effect of Rare Earth Coatings on Photoelectric Characteristics of Porous Silicon Structures

被引：1

作者：

Latukhina, N. V. ^{[1
]}

Nesterov, D. A. ^{[1
]}

Poluektova, N. A. ^{[1
]}

Shishkina, D. A. ^{[1
]}

Uslin, D. A. ^{[1
]}

机构：

[1] Samara Univ, Samara 443086, Russia

来源：

OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2022年 / 58卷 / 06期

关键词：

porous silicon; solar cells; rare earth elements; current-voltage characteristics; capacitance-voltage characteristics; photosensitivity spectra; x-rays;

D O I：

10.3103/S8756699022060073

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

effect of coatings containing dysprosium or erbium ions on the properties of photosensitive structures based on porous silicon is studied. Current-voltage characteristics, capacitance-voltage characteristics, and spectral characteristics of structures with a p-n junction and erbium fluoride or dysprosium fluoride films as well as structures with an oxide layer of a complex composition containing erbium ions are measured. The effect of X-ray radiation with a quantum energy of 6.9 keV on the photoelectric properties of structures with a porous layer and an erbium fluoride coating is studied. It is shown that the coating significantly affects the characteristics of the structures.

引用

页码：626 / 632

页数：7

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