Effect of Rare Earth Coatings on Photoelectric Characteristics of Porous Silicon Structures

被引：1
作者：
Latukhina, N. V. [1 ]
Nesterov, D. A. [1 ]
Poluektova, N. A. [1 ]
Shishkina, D. A. [1 ]
Uslin, D. A. [1 ]
机构：
[1] Samara Univ, Samara 443086, Russia
来源：
OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2022年 / 58卷 / 06期
关键词：
porous silicon; solar cells; rare earth elements; current-voltage characteristics; capacitance-voltage characteristics; photosensitivity spectra; x-rays;
D O I：
10.3103/S8756699022060073
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
effect of coatings containing dysprosium or erbium ions on the properties of photosensitive structures based on porous silicon is studied. Current-voltage characteristics, capacitance-voltage characteristics, and spectral characteristics of structures with a p-n junction and erbium fluoride or dysprosium fluoride films as well as structures with an oxide layer of a complex composition containing erbium ions are measured. The effect of X-ray radiation with a quantum energy of 6.9 keV on the photoelectric properties of structures with a porous layer and an erbium fluoride coating is studied. It is shown that the coating significantly affects the characteristics of the structures.
引用
收藏
页码：626 / 632
页数：7
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