Vapor fluxes on the apical droplet during nanowire growth by molecular beam epitaxy

被引:72
作者
Glas, Frank [1 ]
机构
[1] CNRS Lab Photon & Nanostruct, F-91460 Marcoussis, France
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 02期
关键词
MECHANISM; GAAS;
D O I
10.1002/pssb.200945456
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
During nanowire growth by the vapor-liquid-solid method, part of the atoms incorporated in the nanowire originate from the direct impingement of a vapor beam on the droplet sitting at the top of the nanowire. For a given incident directional flux, as pertains to molecular beam epitaxy, we calculate the variations of this contribution as a function of the beam incidence angle and of the droplet contact angle. This provides a quantitative evaluation of a major contribution to the supply of atoms to the growing nanowire, which can be directly incorporated in growth models. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:254 / 258
页数:5
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    Cai, Y.
    Zhang, R. Q.
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