Electrical and Mechanical Properties Enhancement in Superlattice-Like GaSb/Ge2Sb2Te5 Phase Change Thin Films

被引：11

作者：

Yin, Qixun ^{[1
]}

Wang, Ming ^{[1
]}

Xu, Xiulan ^{[2
]}

Yu, Guanghua ^{[1
]}

Chen, Leng ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[2] Jihua Lab, Adv Mfg Sci & Technol Guangdong Lab, Foshan 528000, Guangdong, Peoples R China

来源：

ADVANCED MATERIALS INTERFACES | 2021年 / 8卷 / 14期

基金：

中国国家自然科学基金;

关键词：

electrical properties; GaSb; Ge2Sb2Te5; super-hardness; superlattice-like thin films; DATA RETENTION; MEMORY; GROWTH; CRYSTALLIZATION;

D O I：

10.1002/admi.202100405

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A promising phase change materials based on a distinct nanoscale structure called superlattice is applied in lateral phase change memory (PCM) due to comprehensive performances. In this work, superlattice-like structure of [GaSb(x)/Ge2Sb2Te5 (gamma)](n) (x= 6,9,12,18 nm; gamma = 12,18 nm; n = 3,6) thin films is proposed and alternatively deposited with GaSb and Ge2Sb2Te5 (GST) layers by magnetron sputtering method. The experimental results show that [GaSb(x nm)/GST(12 nm)](3) thin films possess higher crystallization temperature and less volume change than that of monolayer GST. Moreover, [GaSb(x)/GST(12)](3) thin films show super-hardness and super-modulus effect. The hardness enhancement mechanism is discussed and the critical thickness of CST layer is calculated as approximate to 18.1 nm, thus the interfaces are coherent without dislocation threading in critical condition. Therefore, the higher thermal stability and increased hardness values reflect great potential in practical application of superlattice-like [GaSb(x)/GST(12)](n) thin films.

引用

页数：8

共 48 条

[31] Phase transition in stoichiometric GaSb thin films: Anomalous density change and phase segregation [J].

Putero, Magali ;

Coulet, Marie-Vanessa ;

Ouled-Khachroum, Toufik ;

Muller, Christophe ;

Baehtz, Carsten ;

Raoux, Simone .

APPLIED PHYSICS LETTERS, 2013, 103 (23)

[32] Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films [J].

Reifenberg, John P. ;

Panzer, Matthew A. ;

Kim, SangBum ;

Gibby, Aaron M. ;

Zhang, Yuan ;

Wong, Simon ;

Wong, H.-S. Philip ;

Pop, Eric ;

Goodson, Kenneth E. .

APPLIED PHYSICS LETTERS, 2007, 91 (11)

[33] Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing [J].

Saito, Yuta ;

Kolobov, Alexander V. ;

Fons, Paul ;

Mitrofanov, Kirill V. ;

Makino, Kotaro ;

Tominaga, Junji ;

Robertson, John .

APPLIED PHYSICS LETTERS, 2019, 114 (13)

[34] Nanoindentation study of the superlattice hardening effect at TiC(110)/NbC(110) interfaces [J].

Sekkal, W ;

Zaoui, A ;

Schmauder, S .

APPLIED PHYSICS LETTERS, 2005, 86 (16) :1-3

[35] Theoretical study of the atomistic behavior of O vacancy complexes with N and H atoms in the SiO2 layer of a metal-oxide-nitride-oxide-semiconductor memory: Physical origin of the irreversible threshold voltage shift observed in metal-oxide-nitride-oxide-semiconductor memories [J].

Shirakawa, Hiroki ;

Araidai, Masaaki ;

Kamiya, Katsumasa ;

Shiraishi, Kenji .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (08)

[36]

Simpson RE, 2011, NAT NANOTECHNOL, V6, P501, DOI [10.1038/NNANO.2011.96, 10.1038/nnano.2011.96]

[37] Ultra-low switching power, crystallographic analysis, and switching mechanism for SnXTe100-X/Sb2Te3 diluted superlattice system [J].

Soeya, Susumu ;

Shintani, Toshimichi ;

Odaka, Takahiro ;

Kondou, Reiko ;

Tominaga, Junji .

APPLIED PHYSICS LETTERS, 2013, 103 (05)

[38] A Magnetoresistance Induced by a Nonzero Berry Phase in GeTe/Sb2Te3 Chalcogenide Superlattices [J].

Tominaga, Junji ;

Saito, Yuta ;

Mitrofanov, Kirill ;

Inoue, Nobuki ;

Fons, Paul ;

Kolobov, Alexander V. ;

Nakamura, Hisao ;

Miyata, Noriyuki .

ADVANCED FUNCTIONAL MATERIALS, 2017, 27 (40)

[39] Rapid crystallization of SiO2/Sb80Te20 nanocomposite multilayer films for phase-change memory applications [J].

Wang, Changzhou ;

Li, Simian ;

Zhai, Jiwei ;

Shen, Bo ;

Sun, Mingcheng ;

Lai, Tianshu .

SCRIPTA MATERIALIA, 2011, 64 (07) :645-648

[40] Self-Limited Growth of Nanocrystals in Structural Heterogeneous Phase-Change Materials during the Heating Process [J].

Wang, Guoxiang ;

Zhang, Yawen ;

Li, Chao ;

Lotnyk, Andriy ;

Lu, Yegang ;

Shen, Xiang .

CRYSTAL GROWTH & DESIGN, 2019, 19 (02) :1356-1363

← 1 2 3 4 5 →