Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

被引：53

作者：

Takakura, K. ^{[1
]}

Koga, D. ^{[1
]}

Ohyama, H. ^{[1
]}

Rafi, J. M. ^{[2
]}

Kayamoto, Y. ^{[3
]}

Shibuya, M. ^{[4
]}

Yamamoto, H. ^{[5
]}

Vanhellemont, J. ^{[6
]}

机构：

[1] Kumamoto Natl Coll Technol, Kumamoto 8621102, Japan

[2] CSIC, CNM, Barcelona 08193, Spain

[3] Koto Mfg Co Ltd, Kumamoto 8614211, Japan

[4] Japan Gas Chem, Kumamoto 8620932, Japan

[5] Techno Design Co Ltd, Kumamoto 8612401, Japan

[6] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 23-24期

关键词：

Gallium oxide; Transparent electrode; Optical absorption spectra; THIN-FILMS;

D O I：

10.1016/j.physb.2009.08.167

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Si doped beta-Ga2O3 films were grown on Si substrate by RF magnetron sputtering. The Si concentration varied from 0% to 50%. After the deposition of the amorphous Ga2O3 on the substrate, thermal annealing at 600 degrees C was performed in nitrogen ambient. Polycrystalline beta-Ga2O3 films were grown on Si or quartz substrates; however, other mixed phases of Si, Ga and O were not observed. From the measurement of optical absorption coefficient, it is concluded that the beta-Ga2O3 energy gap increases with increasing Si concentration in the deposited film. (C) 2009 Elsevier B.V. All rights reserved.

引用

收藏

页码：4854 / 4857

页数：4

相关论文

共 50 条

[41] Point and extended defects in heteroepitaxial β-Ga2O3 films [J].

Saadatkia, P. ;

Agarwal, S. ;

Hernandez, A. ;

Reed, E. ;

Brackenbury, I. D. ;

Codding, C. L. ;

Liedke, M. O. ;

Butterling, M. ;

Wagner, A. ;

Selim, F. A. .

PHYSICAL REVIEW MATERIALS, 2020, 4 (10)

[42] A Review of ε-Ga2O3 Films: Fabrications and Photoelectric Properties [J].

Wang, Siwei ;

Jian, Jie ;

Xu, Cong ;

Dong, Xiaoheng ;

Yang, Jielong ;

Zou, Maolin ;

Liu, Wangwang ;

Tu, Qinglong ;

Li, Mengyao ;

Cao, Cheng ;

Liu, Xiangli .

MATERIALS, 2025, 18 (11)

[43] Structural and optical properties of Ga2O3:In films deposited on MgO (100) substrates by MOCVD [J].

Kong, Lingyi ;

Ma, Jin ;

Luan, Caina ;

Zhu, Zhen .

JOURNAL OF SOLID STATE CHEMISTRY, 2011, 184 (08) :1946-1950

[44] Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films [J].

Meng, Xue ;

Deng, Jinxiang ;

Li, Ruidong ;

Zhang, Qing ;

Tian, Kun ;

Xu, Jiawei ;

Yang, Xiaolei ;

Meng, Lingjia ;

Du, Juan ;

Wang, Guisheng .

VACUUM, 2024, 224

[45] Effects of terbium concentrations on the characteristics of Ga2O3 films [J].

Guo, Qixin ;

Koga, Yushi ;

Kawano, Yuki ;

Saito, Katsuhiko ;

Tanaka, Tooru .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (12)

[46] Defects study of MOCVD grown β-Ga2O3 films [J].

Ravadgar, Parvaneh ;

Horng, Ray-Hua ;

Tu, Li-Wei ;

Ou, Sing-Liang ;

Pan, Hui-Ping ;

Yao, Shu-De .

OXIDE-BASED MATERIALS AND DEVICES IV, 2013, 8626

[47] Dispersion of Refractive Index of β-Ga2O3 Thin Films [J].

Bordun, O. M. ;

Kukharskyy, I. Yo ;

Bordun, B. O. ;

Lushchanets, V. B. .

JOURNAL OF APPLIED SPECTROSCOPY, 2014, 81 (05) :771-775

[48] Improved structural and optical properties of β-Ga2O3 films by face-to-face annealing [J].

Wang, Jiang ;

Li, Wanjun ;

Zhang, Hong ;

Xiong, Yuanqiang ;

Ye, Lijuan ;

Ruan, Haibo ;

Qin, Guoping ;

Kong, Chunyang .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (03)

[49] Structural and Optical Characterization of β-Ga2O3 Thin Films Grown by Pulsed Laser Deposition [J].

Goyal, Anshu ;

Yadav, Brajesh S. ;

Thakur, O. P. ;

Kapoor, A. K. .

PHYSICS OF SEMICONDUCTOR DEVICES, 2014, :77-80

[50] Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition [J].

Zhang, F. B. ;

Saito, K. ;

Tanaka, T. ;

Nishio, M. ;

Guo, Q. X. .

JOURNAL OF CRYSTAL GROWTH, 2014, 387 :96-100

← 1 2 3 4 5 →