Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

被引：53

作者：

Takakura, K. ^{[1
]}

Koga, D. ^{[1
]}

Ohyama, H. ^{[1
]}

Rafi, J. M. ^{[2
]}

Kayamoto, Y. ^{[3
]}

Shibuya, M. ^{[4
]}

Yamamoto, H. ^{[5
]}

Vanhellemont, J. ^{[6
]}

机构：

[1] Kumamoto Natl Coll Technol, Kumamoto 8621102, Japan

[2] CSIC, CNM, Barcelona 08193, Spain

[3] Koto Mfg Co Ltd, Kumamoto 8614211, Japan

[4] Japan Gas Chem, Kumamoto 8620932, Japan

[5] Techno Design Co Ltd, Kumamoto 8612401, Japan

[6] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 23-24期

关键词：

Gallium oxide; Transparent electrode; Optical absorption spectra; THIN-FILMS;

D O I：

10.1016/j.physb.2009.08.167

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Si doped beta-Ga2O3 films were grown on Si substrate by RF magnetron sputtering. The Si concentration varied from 0% to 50%. After the deposition of the amorphous Ga2O3 on the substrate, thermal annealing at 600 degrees C was performed in nitrogen ambient. Polycrystalline beta-Ga2O3 films were grown on Si or quartz substrates; however, other mixed phases of Si, Ga and O were not observed. From the measurement of optical absorption coefficient, it is concluded that the beta-Ga2O3 energy gap increases with increasing Si concentration in the deposited film. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4854 / 4857

页数：4

共 50 条

[31] Comparative Study of the Optical Properties of α-, β-, and κ-Ga2O3 [J].

Penman, Lewis T. ;

Johnston, Zak M. ;

Edwards, Paul R. ;

Oshima, Yuichi ;

Mcaleese, Clifford ;

Mazzolini, Piero ;

Bosi, Matteo ;

Seravalli, Luca ;

Fornari, Roberto ;

Martin, Robert W. ;

Massabuau, Fabien C. -P. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2025, 262 (08)

[32] High Crystallization Quality β-Ga2O3 Films Prepared by Chemical Vapor Deposition [J].

Li Xingchen ;

Lin Fengyuan ;

Jia Huimin ;

Kang Yubin ;

Shi Yongji ;

Meng Bingheng ;

Fang Dan ;

Tang Along ;

Wang Dengkui ;

Li Kexue ;

Chu Xueying ;

Wei Zhipeng .

LASER & OPTOELECTRONICS PROGRESS, 2022, 59 (19)

[33] Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition [J].

Wheeler, Virginia D. ;

Nepal, Neeraj ;

Boris, David R. ;

Qadri, Syed B. ;

Nyakiti, Luke O. ;

Lang, Andrew ;

Koehler, Andrew ;

Foster, Geoffrey ;

Walton, Scott G. ;

Eddy, Charles R., Jr. ;

Meyer, David J. .

CHEMISTRY OF MATERIALS, 2020, 32 (03) :1140-1152

[34] Optical properties of LFZ grown β-Ga2O3:Eu3+ fibres [J].

Santos, N. F. ;

Rodrigues, J. ;

Fernandes, A. J. S. ;

Alves, L. C. ;

Alves, E. ;

Costa, F. M. ;

Monteiro, T. .

APPLIED SURFACE SCIENCE, 2012, 258 (23) :9157-9161

[35] Deposition of Ga2O3 thin films by liquid metal target sputtering [J].

Zubkins, Martins ;

Vibornijs, Viktors ;

Strods, Edvards ;

Butanovs, Edgars ;

Bikse, Liga ;

Ottosson, Mikael ;

Hallen, Anders ;

Gabrusenoks, Jevgenijs ;

Purans, Juris ;

Azens, Andris .

VACUUM, 2023, 209

[36] Nanocrystalline and Polycrystalline β-Ga2O3 Thin Films for Deep Ultraviolet Detectors [J].

Pintor-Monroy, Maria Isabel ;

Murillo-Borjas, Bayron L. ;

Queyedo-Lopez, Manuel A. .

ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (10) :3358-3365

[37] Dispersion of Refractive Index of β-Ga2O3 Thin Films [J].

O. M. Bordun ;

I. Yo. Kukharskyy ;

B. O. Bordun ;

V. B. Lushchanets .

Journal of Applied Spectroscopy, 2014, 81 :771-775

[38] Luminescence and Conductivity of β-Ga2O3 and β-Ga2O3:Mg Single Crystals [J].

Vasyltsiv, V. ;

Kostyk, L. ;

Tsvetkova, O. ;

Lys, R. ;

Kushlyk, M. ;

Pavlyk, B. ;

Luchechko, A. .

ACTA PHYSICA POLONICA A, 2022, 141 (04) :312-318

[39] Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation [J].

Cheng, Yi ;

Yang, Kun ;

Peng, Yong ;

Yin, Yan ;

Chen, Jixiang ;

Jing, Bo ;

Liang, Hongwei ;

Du, Guotong .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (12) :5122-5126

[40] The Effect of Annealing on the Properties of Ga2O3 Anodic Films [J].

Kalygina, V. M. ;

Zarubin, A. N. ;

Nayden, Ye P. ;

Novikov, V. A. ;

Petrova, Yu S. ;

Tolbanov, O. P. ;

Tyazhev, A. V. ;

Yaskevich, T. M. .

SEMICONDUCTORS, 2012, 46 (02) :267-273

← 1 2 3 4 5 →