Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

被引：53

作者：

Takakura, K. ^{[1
]}

Koga, D. ^{[1
]}

Ohyama, H. ^{[1
]}

Rafi, J. M. ^{[2
]}

Kayamoto, Y. ^{[3
]}

Shibuya, M. ^{[4
]}

Yamamoto, H. ^{[5
]}

Vanhellemont, J. ^{[6
]}

机构：

[1] Kumamoto Natl Coll Technol, Kumamoto 8621102, Japan

[2] CSIC, CNM, Barcelona 08193, Spain

[3] Koto Mfg Co Ltd, Kumamoto 8614211, Japan

[4] Japan Gas Chem, Kumamoto 8620932, Japan

[5] Techno Design Co Ltd, Kumamoto 8612401, Japan

[6] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 23-24期

关键词：

Gallium oxide; Transparent electrode; Optical absorption spectra; THIN-FILMS;

D O I：

10.1016/j.physb.2009.08.167

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Si doped beta-Ga2O3 films were grown on Si substrate by RF magnetron sputtering. The Si concentration varied from 0% to 50%. After the deposition of the amorphous Ga2O3 on the substrate, thermal annealing at 600 degrees C was performed in nitrogen ambient. Polycrystalline beta-Ga2O3 films were grown on Si or quartz substrates; however, other mixed phases of Si, Ga and O were not observed. From the measurement of optical absorption coefficient, it is concluded that the beta-Ga2O3 energy gap increases with increasing Si concentration in the deposited film. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4854 / 4857

页数：4

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