Growth of nanoscale InGaN self-assembled quantum dots

被引：60
作者：
Ji, LW
Su, YK
Chang, SJ
Wu, LW
Fang, TH
Chen, JF
Tsai, TY
Xue, QK
Chen, SC
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] S Epitaxy Corp, Hsin Shi 744, Taiwan
[3] So Taiwan Univ Technol, Dept Mech Engn, Yong Kan 710, Taiwan
[4] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[5] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Taiwan
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 249卷 / 1-2期
关键词：
atomic force microscopy; photoluminescence; metalorganic chemical vapor deposition; quantum dots; InGaN;
D O I：
10.1016/S0022-0248(02)02130-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
It has been demonstrated that we can use interrupted growth mode in metalorganic chemical vapor deposition (MOCVD) to fabricate nanoscale InGaN self-assembed quantum dots (QDs). With a 12-s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 x 10(10) cm(-2). In contrast, much larger InGaN QDs were obtained without growth interruption. Compared with samples prepared without growth interrupt, a much larger photoluminescence (PL) intensity and a large 67meV PL blue shift was observed from samples prepared with growth interrupt. These results suggest such a growth interrupt method is potentially useful in nitride-based optoelectronic devices grown by MOCVD. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：144 / 148
页数：5
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