Nonlinear Optical Properties of Silicon Nanocrystals Grown by Using a SiOx/SiO2 Super lattice Approach

被引:0
作者
Lu, Wei-Jie [1 ]
Zhang, Rong-Jun [1 ]
Cai, Qing-Yuan [1 ]
Zhou, Wei-Xi [1 ]
Zheng, Yu-Xiang [1 ]
Chen, Liang-Yao [1 ]
Zhou, Hui [2 ]
Qian, Shi-Xiong [2 ]
Seo, Se-Young [3 ]
机构
[1] Fudan Univ, Sch Informat Sci & Engn, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[3] Korea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
关键词
Silicon nanocrystals; Nonlinear optical properties; Z-scan; ARTIFICIAL DIELECTRICS; SIZE; NANOCLUSTERS;
D O I
10.3938/jkps.56.1303
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The nonlinear optical properties have been studied using the Z-scan technique for silicon nanocrystals embedded in a SiO2 matrix formed by high-temperature annealing of SiOx/SiO2 superlattices grown by thermal evaporation. A mode-locked Ti:sapphire laser system producing 140-fs-long pulses at 800 urn was used as the optical source for the Z-scan measurements. The nonlinear refractive index and the nonlinear absorption coefficient of the silicon nauocrystals were found to be 1.2 x 10(-13) cm(2)/W and 1.5 x 10(-9) cm/W, respectively, and to be strongly enhanced compared to those of bulk silicon. Such enhancement of the nonlinear optical properties is considered to be due to the quantum confinement effect of silicon nanocrystals.
引用
收藏
页码:1303 / 1306
页数:4
相关论文
共 21 条
[1]   Third-order nonlinearities in silicon at telecom wavelengths [J].
Dinu, M ;
Quochi, F ;
Garcia, H .
APPLIED PHYSICS LETTERS, 2003, 82 (18) :2954-2956
[2]   Spectroscopic ellipsometric study of size-controlled silicon nano-crystals in SiO2 composite thin film [J].
Feng, Shou-Zhi ;
Zhang, Rong-Jun ;
Zheng, Yu-Xiang ;
Li, Jing ;
Mao, Peng-Hui ;
Li, Xiao-Fan ;
Chen, Liang-Yao .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (04) :1593-1597
[3]   Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by plasma-enhanced chemical-vapor deposition [J].
Hernandez, S. ;
Pellegrino, P. ;
Martinez, A. ;
Lebour, Y. ;
Garrido, B. ;
Spano, R. ;
Cazzanelli, M. ;
Daldosso, N. ;
Pavesi, L. ;
Jordana, E. ;
Fedeli, J. M. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)
[4]   Nonlinear optical properties of Si nanocrystals embedded in SiO2 prepared by a cosputtering method [J].
Imakita, Kenji ;
Ito, Masahiko ;
Fujii, Minoru ;
Hayashi, Shinji .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)
[5]   Silicon photonics [J].
Jalali, Bahrain ;
Fathpour, Sasan .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2006, 24 (12) :4600-4615
[6]   Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films -: art. no. 046105 [J].
Jambois, O ;
Rinnert, H ;
Devaux, X ;
Vergnat, M .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)
[7]   Dispersion of silicon nonlinearities in the near infrared region [J].
Lin, Q. ;
Zhang, J. ;
Piredda, G. ;
Boyd, R. W. ;
Fauchet, P. M. ;
Agrawal, G. P. .
APPLIED PHYSICS LETTERS, 2007, 91 (02)
[8]   Two-photon absorption in Si-nanocrystals deposited by plasma-enhanced chemical-vapor deposition [J].
Martinez, A. ;
Hernandez, S. ;
Lebour, Y. ;
Pellegrino, P. ;
Jordana, E. ;
Fedeli, J. M. ;
Garrido, B. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (06) :1002-1005
[9]   Optical nonlinearities in silicon for pulse durations of the order of nanoseconds at 1.06 μm [J].
Ogusu, Kazuhiko ;
Shinkawa, Kenta .
OPTICS EXPRESS, 2008, 16 (19) :14780-14791
[10]   Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition [J].
Prakash, GV ;
Cazzanelli, M ;
Gaburro, Z ;
Pavesi, L ;
Iacona, F ;
Franzò, G ;
Priolo, F .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) :4607-4610