Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate

被引：1
作者：
Hara, Akito [1 ]
Sato, Tsutomu [1 ]
机构：
[1] Tohoku Gakuin Univ, Tagajo, Miyagi 9858537, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 01期
基金：
日本学术振兴会;
关键词：
CRYSTALLIZATION;
D O I：
10.1143/JJAP.49.010203
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Large-grained polycrystalline silicon (poly-Si) films on a glass substrate are good candidate materials for fabricating poly-Si thin-film transistors (TFTs) and poly-Si solar cells. The gettering of metal impurities in thin poly-Si films is one of the key techniques for realizing high-performance, high-reliability, and high-efficiency TFTs and solar cells. In this study, the gettering of large-grained thin poly-Si films with a thickness of 100 nm containing Ni impurities was studied. A large-grained Ni-doped thin poly-Si film was fabricated on a glass substrate by Ni-induced solid phase crystallization (SPC) followed by cw green laser recrystallization. The grain size of the poly-Si film was 1 x 10 mu m(2). The behavior of Ni impurities in the large-grained thin poly-Si film was evaluated by scanning transmission electron microscopy (STEM), STEM energy-dispersive X-ray spectroscopy (STEM-EDX), and electron diffraction (ED) analysis. It was observed that Ni was stabilized through the formation of nickel-disilicide (NiSi(2)) at the triple junction during low-temperature device fabrication. (C) 2010 The Japan Society of Applied Physics
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页数：2
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