Stability and Reliability of Lateral GaN Power Field-Effect Transistors

被引：106
作者：
del Alamo, Jesus A. [1 ]
Lee, Ethan S. [1 ]
机构：
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 11期
关键词：
Gallium nitride; HEMTs; Aluminum gallium nitride; Wide band gap semiconductors; Logic gates; Integrated circuit reliability; AlGaN; GaN; power transistors; reliability; stability; THRESHOLD-VOLTAGE INSTABILITY; ELECTRON-MOBILITY TRANSISTORS; BIAS TEMPERATURE INSTABILITY; P-TYPE GATE; OF-THE-ART; ALGAN/GAN HEMTS; CURRENT COLLAPSE; SURFACE PASSIVATION; DEGRADATION MECHANISMS; PART I;
D O I：
10.1109/TED.2019.2931718
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications, radar, and sensing systems. GaN power transistors for electrical power management are also starting to reach the marketplace. From the dawn of this technology, inadequate transistor stability and reliability have represented stumbling blocks preventing widespread commercial use of GaN electronics. Intense research has been devoted to addressing these issues, and great progress has taken place recently. This article reviews some of the most interesting and significant stability and reliability issues that have plagued GaN power field-effect transistors for RF and power management applications.
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收藏
页码：4578 / 4590
页数：13
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