Modulation response analysis of 1.3 μm quantum dot vertical-cavity surface-emitting lasers

被引：4

作者：

Peng Hong-Ling ^{[1
]}

Han Qin ^{[1
]}

Yang Xiao-Hong ^{[1
]}

Niu Zhi-Chuan ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

ACTA PHYSICA SINICA | 2007年 / 56卷 / 02期

关键词：

quantum dots; vertical-cavity surface-emitting laser; differential gain; 3 dB bandwidth;

D O I：

10.7498/aps.56.863

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Some important parameters, such as gain, 3 dB bandwidth and threshold current of 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL) are theoretically investigated. Some methods are developed to improve the VCSEL's modulation response. Significant improvement are prediced for p-type modulation doping. In connection with the threshold characteristic, we found that a structure with short cavity, multilayer quantum dots stack, p-type modulation doping and double intracavity contact on an un-doped DBR is much better suited to high speed quantum dot VCSELs. The parasitic effects of the VCSEL are,analyzed and the influence of packaging of the VCSEL on its modulation responds is analyzed.

引用

页码：863 / 870

页数：8

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