Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer

被引：3

作者：

Besancon, C. ^{[1
,2
,4
]}

Fanneau, P. ^{[1
,2
]}

Neel, D. ^{[1
,2
]}

Cerulo, G. ^{[1
,2
]}

Vaissiere, N. ^{[1
,2
]}

Make, D. ^{[1
,2
]}

Pommereau, F. ^{[1
,2
]}

Fournel, F. ^{[3
]}

Dupre, C. ^{[3
]}

Baron, T. ^{[4
]}

Decobert, J. ^{[1
,2
]}

机构：

[1] Thales Res & Technol, Lab 3 5, F-91120 Palaiseau, France

[2] CEA LETI, F-91120 Palaiseau, France

[3] Univ Grenoble Alpes, CEA LETI, F-38000 Grenoble, France

[4] Univ Grenoble Alpes, CNRS, CEA LETI Minatec, LTM, F-38054 Grenoble, France

来源：

2020 EUROPEAN CONFERENCE ON OPTICAL COMMUNICATIONS (ECOC) | 2020年

基金：

欧盟地平线“2020”;

关键词：

D O I：

10.1109/ECOC48923.2020.9333230

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Vertical p-i-n AlGalnAs lasers obtained from a single Selective Area Growth (SAG) step on a thin InP layer bonded to silicon wafers are presented. A PL extension from 1490 nm to 1645 nm was demonstrated on InP-SOI wafer. Based on this result, a record of 155 nm wide spectral range was obtained for FP lasers on InP-SiO2/Si wafer.

引用

页数：4

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