High gain g-band mmic amplifiers based on sub-50 nm gate length inp HEMT

被引：6

作者：

Liu, P. H. ^{[1
]}

Yoshida, W. ^{[1
]}

Lee, J. ^{[1
]}

Dang, L. ^{[1
]}

Wang, J. ^{[1
]}

Liu, W. ^{[1
]}

Uyeda, J. ^{[1
]}

Li, D. ^{[1
]}

Mei, X. B. ^{[1
]}

Deal, W. ^{[1
]}

Barsky, M. ^{[1
]}

Kim, Y. M. ^{[1
]}

Lange, M. ^{[1
]}

Chin, T. P. ^{[1
]}

Radisic, V. ^{[1
]}

Gaier, T. ^{[1
]}

Fung, A. ^{[1
]}

Lai, R. ^{[1
]}

机构：

[1] Northro Grumman Space Techbol, 1 Space Pk, Redondo Beach, CA 90278 USA

来源：

2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年

关键词：

D O I：

10.1109/ICIPRM.2007.380679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have recently developed a sub-50nm gate length InP HEMT (High Electron Mobility Transistor) process with a peak transconductance of 2000 mS/mrn at IV. A 3-stage single-ended common source 150-220 GHz MMIC LNA demonstrates greater than 20 dB gain at 200 GHz (> 7 dB gain per stage) and is > 5 dB higher LNA gain compared to the same MMIC design fabricated on our baselined 70 nm gate length InP HEMT MMIC process. To our knowledge, this is the highest, amplifier gain per stage achieved at this frequency range.

引用

页码：22 / +

页数：2

共 3 条

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Elmajarian, R ;

Rodriguez, R ;

Tran, L ;

Gutierrez, A ;

Oki, A ;

Streit, D .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :175-177

[2]

LAI R, 2006, 2006 INT INP REL MAT

[3] 220-GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications [J].

Tessmann, A .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (10) :2070-2076

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