New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFET's

被引：18

作者：

Georgescu, B ^{[1
]}

Py, MA

Souifi, A

Post, G

Guillot, G

机构：

[1] Inst Natl Sci Appl, Phys Mat Lab, UMR CNRS 5511, F-69621 Villeurbanne, France

[2] Swiss Federal Inst Technol, Dept Phys, Inst Microelect, Zurich, Switzerland

[3] CNET, France Telecom, DTD, Lab Bagneux, F-92225 Bagneux, France

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 05期

关键词：

D O I：

10.1109/55.669733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The kink effect in InAlAs/InGaAs/InP composite channel heterojunction field effect transistors (HFET's) was investigated as a function of temperature and optical excitation, Drain source and gate current measurements show that above 325 K the kink effect disappears while the impact ionization process is still present. The kink at low temperatures is suppressed by illumination with photons of energy above 1 eV. These results prove that this parasitic effect is mainly related to the presence of traps in the top layers.

引用

页码：154 / 156

页数：3

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