Mapping of strain and electric fields in GaAs/AlxGa1-xAs quantum-well samples by laser-assisted NMR -: art. no. 085308

The usefulness of semiconductor heterostructures derives from the possibility to engineer their electronic and optical properties to match the requirements of many different applications. Optically detected nuclear magnetic resonance provides the possibility to map microscopic properties of such samples with a high spatial resolution through the splitting of resonance lines. In a multiple quantum-well sample, we measure the distortion of the crystal lattice and find variations of the order of 10(-5) over distances of a few mm. Internal electric fields also cause resonance line splittings. Comparing the electric field-induced resonance line splittings in different quantum wells, we mapped the vertical variation of the electric field from a Schottky contact with a spatial resolution of some 40 nm.