GaAs(001) planarization after conventional oxide removal utilising self-governed InAs QD site selection

被引：4

作者：

Bastiman, F. ^{[1
]}

Cullis, A. G. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 13期

关键词：

Scanning tunnelling microscopy; Molecular beam epitaxy; Quantum dots; InAs; GaAs; MOLECULAR-BEAM EPITAXY; UNSTABLE GROWTH; SURFACE; GAAS; HOMOEPITAXY; DESORPTION; MBE;

D O I：

10.1016/j.apsusc.2010.02.013

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Native oxide removal on GaAs(0 0 1) wafers under conventional thermal desorption causes severe surface degradation in the form of pitting. Typical surface regeneration requires several hundred nanometres of buffer layer growth. This level of planarization is necessary to fill in the deep pits since Ehrlich-Schwoebel diffusion barriers cause a retardation of layer growth at multiple monolayer step edges. Pits are, however, attractive nucleation sites for quantum dots (QDs), and hence QDs fill the pits via a self-governing phenomenon. In this paper, we show how 1.7 ML of InAs growth on GaAs(0 0 1) immediately after thermal oxide removal aids the healing of the surface and reduces the necessity for thick buffer layer growth. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：4269 / 4271

页数：3

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