Effect of grain size on the electrical properties of (Pb0.72La0.28)Ti0.93O3 thin films grown by pulsed laser deposition

被引：4

作者：

Han, KB ^{[1
]}

Jeon, CH ^{[1
]}

Jhon, HS ^{[1
]}

Lee, SY ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seodaemun Ku, Seoul 120749, South Korea

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2002年 / 5卷 / 2-3期

关键词：

(Pb0.72La0.28)Ti0.93O3; pulsed laser deposition; annealing; scanning electron microscopy;

D O I：

10.1016/S1369-8001(02)00112-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of phase-pure perovskite PLT [(Pb0.72La0.28)Ti0.93O3] were deposited in-situ onto Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by pulsed laser deposition from a stoichiometric target. We have systematically investigated the variation of grain sizes depending on the process conditions. The grain sizes of PLT thin films were changed from 110 to 350 nm by changing annealing process parameters and by using a two-step deposition process. We confirmed that grain sizes were varied under these deposition conditions. C-V measurements, polarization loops, leakage current measurements and scanning electron microscopy were performed to investigate the electrical and microstructural properties of (Pb,La)TiO3 films. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：249 / 252

页数：4

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