Synthesis of aluminum nitride films by activated reactive ion plating with a cathodic arc source

被引：10

作者：

Xin, HW ^{[1
]}

Tian, LH

Pan, JD

He, Q

Xu, Z

Zhang, ZM

机构：

[1] Shanghai Jiao Tong Univ, Res Inst Micro Nanometer Sci & Technol, Shanghai 200030, Peoples R China

[2] Taiyuan Univ Technol, Res Inst Surface Engn, Taiyuan 030024, Peoples R China

来源：

SURFACE & COATINGS TECHNOLOGY | 2000年 / 131卷 / 1-3期

关键词：

aluminum nitride films; activated reactive ion plating; cathodic arc source; glow discharge;

D O I：

10.1016/S0257-8972(00)00756-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new type of method, which synthesized aluminum nitride (AlN) films by activated reactive ion plating with a cathodic are source, was introduced. Using aluminum and nitrogen gas as source materials, the aluminum nitride films were deposited on Si(100), Mo and stainless steel substrates, and the deposition rate was varied from 4.7 to 20.2 nm/s. The structure and morphology of the synthesized films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and infrared reflection absorption spectroscopy (IRAS). The morphology of the films was cauliflower. A transition zone was detected between the film and the substrate. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：167 / 170

页数：4