Hysteretic behavior of angular dependence of exchange bias in FeNi/FeMn bilayers

被引：40

作者：

Gao, T. R. ^{[1
]}

Yang, D. Z.

Zhou, S. M.

Chantrell, R.

Asselin, P.

Du, J.

Wu, X. S.

机构：

[1] Fudan Univ, State Key Lab Adv Photon Mat Devices, Shanghai 200433, Peoples R China

[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

[3] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

[4] Seagate Res, Pittsburgh, PA 15222 USA

[5] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.99.057201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

For FeNi/FeMn bilayers, the angular dependence of exchange bias shows hysteresis between clockwise and counterclockwise rotations, as a new signature. The hysteresis decreases for thick antiferromagnet layers. Calculations have clearly shown that the orientation of antiferromagnet spins also exhibits hysteresis between clockwise and counterclockwise rotations. This furnishes an interpretation of the macroscopic behavior of the ferromagnetic layer in terms of the thermally driven evolution of the magnetic state of the antiferromagnet layer.

引用

页数：4

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