Nanoindentation of epitaxial GaN films

被引：105

作者：

Kucheyev, SO ^{[1
]}

Bradby, JE

Williams, JS

Jagadish, C

Toth, M

Phillips, MR

Swain, MV

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[2] Univ Technol Sydney, Microstruct Anal Unit, Broadway, NSW 2007, Australia

[3] Univ Sydney, Dept Mech & Mechatronis Engn, Biomat Sci Res Unit, Eveleigh, NSW 1430, Australia

[4] Univ Sydney, Fac Dent, Eveleigh, NSW 1430, Australia

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 21期

关键词：

D O I：

10.1063/1.1328047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 mum) as well as on doping type is observed. Slip is identified as one of the physical mechanisms responsible for plastic deformation of GaN and may also contribute to the "pop-in" events observed during loading. No visible material cracking is found even after indentations at high loads (900 mN), but a pronounced elevation of the material surrounding the impression is observed. (C) 2000 American Institute of Physics. [S0003-6951(00)04447-8].

引用

页码：3373 / 3375

页数：3

共 15 条

[1]

BRADBY JE, UNPUB

[2] Nanoindentation on AlGaN thin films [J].