An Active Deep Learning Method for the Detection of Defects in Power Semiconductors

被引:5
作者
Bellini, Marco [1 ]
Pantalos, Georges [2 ]
Kaspar, Peter [1 ]
Knoll, Lars [1 ]
De-Michielis, Luca [1 ]
机构
[1] Hitachi ABB Power Grids, Semicond, Lenzburg, Switzerland
[2] ETH, Dept Mech Engn, Zurich, Switzerland
来源
2021 32ND ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC) | 2021年
关键词
Silicon defects; deep learning; active learning; convolutional neural network; SPATIAL-PATTERN; RECOGNITION;
D O I
10.1109/ASMC51741.2021.9435657
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Accurate detection of semiconductor defects is crucial to ensure reliability of operation and to improve yield by understanding and eradicating yield detractors. Recent advances in computer vision driven by Deep Convolutional Neural Networks (DCNN) and transfer learning have enabled novel techniques for defect detection and classification [1-7]. However, training neural networks requires very large datasets, even with transfer learning. This paper addresses this shortcoming by introducing for the first time the active learning approach for semiconductor devices. The proposed neural network can accurately identify defective dies with modest efforts in terms of annotating the image set. Finally, the feature maps of the DCNN are used to generate an unsupervised taxonomy of the semiconductor die defects, supporting further investigations to address yield detractors
引用
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页数:5
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