Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface

被引：20

作者：

Mantsevich, V. N. ^{[1
]}

Maslova, N. S. ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119991, Russia

来源：

JETP LETTERS | 2010年 / 91卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

Impurity Atom; Atomic Chain; Fano Resonance; Applied Bias Voltage; Tunneling Conductivity;

D O I：

10.1134/S0021364010030082

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS) depending on the distance value from the impurity.

引用

页码：139 / 142

页数：4

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